Jiangsu Profile
Product List
3376. High Purity Hexachlorodisilane Hcds 99 999% Precursor for Semiconductor Deposition Processes 
[Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3377. High Purity 99 999% Hexachlorodisilane Semiconductor Precursor for Ald Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3378. Hexachlorodisilane Si2cl6 99 999% Hcds Precursor for Ald and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3379. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor Chemical [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3380. Semiconductor ALD CVD Precursor Hexachlorodisilane HCDS CAS 13465-77-5 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3381. Semiconductor Grade HCDS Hexachlorodisilane for Atomic Layer Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3382. Hexachlorodisilane Hcds 5n Precursor for Ald CVD and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3383. Hexachlorodisilane Supplier HCDS Precursor for Semiconductor ALD and CVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3384. High Purity Hexachlorodisilane HCDS for Semiconductor ALD CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3385. Semiconductor Grade Hcds 5n Hexachlorodisilane 99 999% Ald CVD Lpcvd Precursor Si2cl6 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3386. Hexachlorodisilane Supplier 5n Hcds Semiconductor Precursor for Ald and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3387. High Purity Semiconductor Grade Hexachlorodisilane Hcds for Ald CVD Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3388. High Purity Si2cl6 Hexachlorodisilane 5n Hcds Semiconductor Ald CVD Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3389. Semiconductor Precursor Hcds 99 999% Hexachlorodisilane for Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3390. Hexachlorodisilane Si2cl6 5n 99 999% High Purity Semiconductor Precursor Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
