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3391. High Purity Si2cl6 Hexachlorodisilane for Semiconductor Ald Precursor Applications 
[Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3392. HCDS 99 999% Hexachlorodisilane 5N Semiconductor Precursor for ALD CVD LPCVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3393. 5n Semiconductor Grade Hcds Hexachlorodisilane for Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3394. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3395. 99 999% Hexachlorodisilane Si2cl6 Semiconductor Grade Hcds Precursor for Ald and CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3396. Hcds for Ald CVD Lpcvd High Purity 5n Hexachlorodisilane Semiconductor Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3397. High Purity Hexachlorodisilane Hcds 5n Precursor for Semiconductor Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3398. Semiconductor Grade Hexachlorodisilane HCDS 5N High Purity Precursor for ALD CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3399. Hexachlorodisilane 268 89 G/Mol Hcds 5n Semiconductor Grade Ald CVD Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3400. Hcds for CVD 5n Hexachlorodisilane Semiconductor Grade Precursor Si2cl6 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3401. High Purity Hcds 5n Hexachlorodisilane for Semiconductor CVD Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3402. Hexachlorodisilane Si2cl6 5n Semiconductor Precursor for Ald CVD Lpcvd Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3403. 5n Semiconductor Grade Hexachlorodisilane Hcds Precursor for CVD and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3404. Hexachlorodisilane Supplier 5n Hcds for Semiconductor Ald CVD Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3405. Hexachlorodisilane Supplier Hcds 5n 99 999% High Purity Semiconductor Ald CVD Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
