Jiangsu Profile
Product List
511. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f 
[Jun 24, 2024]
[Jun 24, 2024] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
512. 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 [Jun 24, 2024]
[Jun 24, 2024] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
513. Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
514. Triac BTA16-600b to-220mf [Feb 22, 2025]
[Feb 22, 2025] Description 16A series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. (TO-220AIns) series provide insulation voltage rated at ...
515. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
516. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
517. 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L [Jun 24, 2024]
[Jun 24, 2024] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
518. Bt152 20A 600V Series 20A Scrs Transistor Triac Support Thyistor Customization [Jun 28, 2021]
[Jun 28, 2021] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
519. 30A 45V Schottky Barrier Diode Mbr3045CT to-263 [Jan 22, 2025]
[Jan 22, 2025] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
520. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Jan 20, 2025]
[Jan 20, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
521. Dh066n06b, to-251, 85A 60V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
522. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06D to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
523. 20A 60V Schottky Barrier Diode Mbr2060CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
524. B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
525. 600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
