Jiangsu Profile
Product List
511. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220C 
[Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
512. 180A 40V N-Channel Enhancement Mode Power MOSFET DSG019N04L TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...
513. 8A 800V N-Channel Super Junction Power MOSFET DJG660N80E TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
514. Closed-Loop Current Transducer for BMS Battery Monitoring +12V Power Supply Current Sensor Can ... [Jul 29, 2026]
[Jul 29, 2026] 
Principle The CHB_CAB series current sensors are suitable for EV battery monitoring applications, providing high accuracy and extremely low zero error. When measuring, the primary side (high voltage) and secondary side ...
Company: Cheemi Technology Co., Ltd.
515. 11A 650V N-Channel Super Junction Power MOSFET DHBSJ11N65 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
516. Tec1-12705 Thermoelectric Cooler Peltier 12705 12V 5A Cells, Tec12705 Peltier Elemente Module ... [Jun 29, 2026]
[Jun 29, 2026] Product Description Introducing the TEC1-12705, a versatile 40x40mm thermoelectric cooler designed to deliver unparalleled thermal management. Chip Type: The leading-edge TEC1-12705 Dimensions: Measuring at 40 x ...
517. 80A 68V N-Channel Enhancement Mode Power MOSFET DTD080N07N TO-252B [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
518. 50A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT G50N120D TO-264 [Aug 28, 2026]
[Aug 28, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
519. 170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
520. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...
521. 200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
522. 660A 800V N-Channel Enhancement Mode Power MOSFET DJE660N80E TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
523. 240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
524. 180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
525. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C [Sep 05, 2026]
[Sep 05, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
