Jiangsu Profile
Product List
556. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85D to-252 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS055N85/DHS055N85E DHS055N85D/DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
557. 60A 1200V Fast Recovery Diode Mur60120 to-247-2L [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
558. Three-Terminal Voltage Regulator IC L7808CV to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
559. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
560. Three-Terminal Negative Voltage Regulator IC L7915CV to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
561. 160A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n85 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS025N85/DHS025N85E DHS025N85D/DHS025N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
562. 40A 300V Fast Recovery Diode Mur4030DCT to-3p [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
563. Dhs065n85 to-220 100A 85V N-Channel Enhancement Mode Power Mosfet [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 95 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 400 mJ Ptot - - 125 W Rdson 6.5 - 7.8 mΩ ...
564. TR UPS High Precision Anti-Interference Broadband AC/DC Hall Sensor Current Sensor 500A/4V Factory ... [Apr 29, 2025]
[Apr 29, 2025] 
Product Description PRODUCT OVERVIEW The sensor works on the principle of direct measurement Hall detection. The magnetic flux generated by the primary current is gathered in the magnetic circuit, and ...
Company: Hubei Tianrui Electronic Co., Ltd.
565. Low Frequency Amplifier Shell Rated Bipolar NPN Transistor D882 to-126 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...
566. Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220 [Apr 08, 2025]
[Apr 08, 2025] PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
567. 600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
568. 7A 600V N-Channel Enhancement Mode Power Mosfet 7n60 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
569. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
570. 20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
