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35A 400V Block Diode Bk354 and Soza Cell Diode
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496.

35A 400V Block Diode Bk354 and Soza Cell Diode Open Details in New Window [Jun 30, 2026]

35A 400V PRESS FIT DIODE -ZQ354 the dia can be 10.1mm, 10.5mm, 10.8mm, 12.8mm. Amper could be 25A, 35A, 50A, Voltage could be 400V, 19-42V. Datasheet Products list AUTOMOTIVE ...

Company: Changzhou Shunye Electronics Co., Ltd.

2A 1000V SMA Silicon Rectifier S2m
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497.

2A 1000V SMA Silicon Rectifier S2m Open Details in New Window [Jun 30, 2026]

2A,50-1000V- SMA SILICON RECTIFIER-S2A-S2M 2A,1000V,S2M Datasheet Products list SURFACE MOUNE SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

1A 1000V SMA Rectifier Diode S1m
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498.

1A 1000V SMA Rectifier Diode S1m Open Details in New Window [Jun 30, 2026]

1A,1000V-SILICON RECTIFIER-S1M Datasheet Products list SURFACE MOUNE SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...

Company: Changzhou Shunye Electronics Co., Ltd.

High Efficiency Siw50n65g2l2g IGBT Power Mosfet Transistor to-247
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499.

High Efficiency Siw50n65g2l2g IGBT Power Mosfet Transistor to-247 Open Details in New Window [Jul 22, 2026]

Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...

Company: Nova Import & Export Trade Co., Ltd

New Original to-220f 650V IGBT Discrete
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500.

New Original to-220f 650V IGBT Discrete Open Details in New Window [Jul 22, 2026]

The cutting-edge SJ-IGBT series is engineered to deliver exceptional performance, minimizing switching losses for unparalleled energy efficiency. Designed with high avalanche ruggedness, it perfectly suits motor control ...

Company: Nova Import & Export Trade Co., Ltd

Advanced IGBT 650V for UPS Solution and Pfc Applications
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501.

Advanced IGBT 650V for UPS Solution and Pfc Applications Open Details in New Window [Jul 22, 2026]

Introducing the extraordinary SJ-IGBT series from Nova Import & Export Trade Co., Ltd, meticulously crafted to revolutionize your systems with exceptional, cutting-edge performance. This series boasts impressively low ...

Company: Nova Import & Export Trade Co., Ltd

High-Performance 650V Trench and Super Junction IGBT Discrete
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502.

High-Performance 650V Trench and Super Junction IGBT Discrete Open Details in New Window [Jul 22, 2026]

The magnificent SJ-IGBT series is meticulously engineered to deliver unparalleled performance, distinguished by its minimal switching losses. This ensures outstanding energy efficiency and a remarkable level of high ...

Company: Nova Import & Export Trade Co., Ltd

35A, 200-600V Diode Rectifier Block Bd354
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503.

35A, 200-600V Diode Rectifier Block Bd354 Open Details in New Window [Jun 02, 2026]

BLOCK DIODE-BD352-BD356 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

50A, 400V Diode Rectifier Block Bd504
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504.

50A, 400V Diode Rectifier Block Bd504 Open Details in New Window [Jun 02, 2026]

BLOCK DIODE-BD502-BD504 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220
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505.

60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252
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506.

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252 Open Details in New Window [Sep 05, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03 TO-220C
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507.

140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03 TO-220C Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V Schottky Barrier Diode MBRF40100CT TO-220F
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508.

40A 100V Schottky Barrier Diode MBRF40100CT TO-220F Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B
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509.

60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 700V N-Channel Super Junction Power MOSFET DJD420N70T TO-252
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510.

10.6A 700V N-Channel Super Junction Power MOSFET DJD420N70T TO-252 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd