Jiangsu Profile

Product List
631. Three-Terminal 1.0A Positive Voltage Regulator IC 78m12A to-252
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
632. 40A 150V Schottky Barrier Diode Mbr40150CT to-263
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
633. 60A 300V Fast Recovery Diode Mur6030dcs to-3p
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
634. 80A 400V Fast Recovery Diode Mur80fu40bct to-247
[Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
635. 20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
636. 10A 100V Schottkybarrierdiode Mbr10100CT to-220m
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
637. 20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
638. 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n20 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Drian-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Drain ...
639. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f
[Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
640. 10A 45V Schottky Barrier Diode Mbr1045CT to-220m
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
641. 20A 150V Schottky Barrier Diode Mbr20150CT to-220
[Jun 24, 2024]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 10 IF(A) Dual chip package 20 Features High junction temperature ...
642. 650 V 8A Sic Schottky Barrier Diode SDS065j008s3
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
643. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
644. 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2L
[Jun 24, 2024]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
645. 50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw
[Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...
