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54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252
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871.

54A 30V P-Channel Enhancement Mode Power Mosfet Dh130p03D to-252 Open Details in New Window [Sep 29, 2025]

PARAMETER SYMBOL VALUE UNIT DH130P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -54 A (T=100ºC) -38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Diesel Generator Accessory Rsk6001 Rectifier Diode
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872.

Diesel Generator Accessory Rsk6001 Rectifier Diode Open Details in New Window [Sep 29, 2025]

Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...

Company: Jiangsu Lingyu Generator Co., Ltd.

Diesel Generator Diode Module High Quality
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873.

Diesel Generator Diode Module High Quality Open Details in New Window [Sep 29, 2025]

Product Introduction Place of Origin: Jiangsu, China (Mainland) Brand Name: LINGYU Model Number: RSK6001 Type: Rectifier Diode, Bridge Rectifier Package Type: Surface Mount weight: 0.07kg Package: Carton box ...

Company: Jiangsu Lingyu Generator Co., Ltd.

700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f
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874.

700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f Open Details in New Window [Sep 02, 2025]

PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252
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875.

7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 Open Details in New Window [Sep 02, 2025]

PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252
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876.

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode Mur6040DCT to-3p
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877.

60A 400V Fast Recovery Diode Mur6040DCT to-3p Open Details in New Window [Sep 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252
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878.

60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c
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879.

5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 1200V Fast Recovery Diode Mur30120 to-220-2L
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880.

30A 1200V Fast Recovery Diode Mur30120 to-220-2L Open Details in New Window [Oct 28, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Thyristor Silicon Controlled Rectifier Series 2p4m to-126
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881.

Thyristor Silicon Controlled Rectifier Series 2p4m to-126 Open Details in New Window [Jun 23, 2025]

Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220
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882.

7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 Open Details in New Window [Jun 23, 2025]

Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L
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883.

650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L Open Details in New Window [Jun 23, 2025]

6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b
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884.

40A 30V N-Channel Enhancement Mode Power Mosfet DHD80n03 to-252b Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale Triac Thyristor Bt137 to-252
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885.

Hot Sale Triac Thyristor Bt137 to-252 Open Details in New Window [Nov 28, 2025]

Description BT137 series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. TO-220F provides insulation voltage rated at 2000V RMS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd