Jiangsu Profile
Product List
736. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
737. 10A 150V Schottky Barrier Diode Mbr10150CT to-252b [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
738. 30A 600V Fast Recovery Diode Mur3060 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
739. 11A 650V N-Channel Super Junction Power Mosfet Dhesj11n65 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
740. 4A 600V N-Channel Enhancement Mode Power Mosfet B4n60 to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
741. 600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
742. 40A 600V Fast Recovery Diode Mur40fu60DCT to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V DC Blocking Voltage VR 600 V Average Rectified Forward ...
743. Dh065n07, to-220, 85A 68V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
744. 25A 30V N-Channel Enhancement Mode Power Mosfet DHD20n03 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB20N03/DHD20N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 16 A Drain ...
745. B4n65 to-251 4A 650V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
746. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
747. 40A 300V Fast Recovery Diode Mur4030DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
748. 60A 200V Fast Recovery Diode Mur6020DCT to-3p [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
749. 18A 1200V N-Channel Sic Power Mosfet S18n120d [Jun 23, 2025]
[Jun 23, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
750. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
