Jiangsu Profile
Product List
796. Semiconductor PTFE Dippers Wafer Cleaning Size Can Be Customized for a Variety of Wafers 
[Jul 11, 2025]
[Jul 11, 2025] Company Profile Nanjing Binzhenghong Instrument Co.,Ltd is a professional laboratory product manufacturer which mainly has laboratory products based on PTFE/PFA/FEP and other materials, such as: beaker/reagent ...
797. Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 230 V Collector- Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 15 A Base Current IB 1.5 A 3PN ...
798. 100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
799. 180A 60V N-Channel Enhancement Mode Power Mosfet 180n06 to-247 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 130 A Drain ...
800. 7A 800V N-Channel Enhancement Mode Power Mosfet 7n80 to-220 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
801. Insulated Gate Bipolar Transistor IGBT G30n120d to-247 [Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
802. Dh240n06ld to-252 30A 60V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
803. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
804. 250A 88V N-Channel Enhancement Mode Power Mosfet Dhs020n88 to-220 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
805. 10A 650V N-Channel Enhancement Mode Power Mosfet 10n65 to-220 [Jun 25, 2025]
[Jun 25, 2025] Features Low switching loss Low ON Resistance (Rdson≤5.5mΩ) Low Gate Charge (Typ: 48nC) Low Reverse Transfer Capacitances (Typ: 210pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
806. 20A 500V N-Channel Enhancement Mode Power Mosfet 20n50b to-247 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50/20N50B F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
807. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh60n06 to-220 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
808. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
809. 500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
810. 30A 45V Low Vf Schottky Barrier Diode Mbr30r45cts to-220c [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
