Jiangsu Profile
Product List
916. 20A 80V Low Schottky Barrier Diode Mbr20r80CT to-220 
[Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 80 typ.90 IR(uA)25ºC max 100 VF (V) 25ºC typ. 0.58 max 0.7 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
917. 80A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P70/DH100P70I/DH100P70E DH100P70F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
918. 5A 500V N-Channel Enhancement Mode Power Mosfet 5n50 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
919. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS037N10 DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
920. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
921. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06f to-220f [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
922. 20A 100V Schottkybarrierdiode Mbra20100CT to-220m [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical ...
923. 7A 650V N-Channel Enhancement Mode Power Mosfet F7n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
924. 4A 700V N-Channel Enhancement Mode Power Mosfet D4n70 to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 4N70/D4N70/B4N70/I4N70/E4N70 F4N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
925. 10A 150V Schottky Barrier Diode Mbrf10150CT to-220f [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
926. 60A 60V Schottkybarrierdiode Mbr6060nct to-3pn [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
927. 80A 200V Fast Recovery Diode Mur80fu20nct to-3pn [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
928. 15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
929. 75A 1200V Fast Recovery Diode Mur75120 to-247-2L [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 1200 typ 1300 IR(uA)25ºC max 5.0 VF (V) 25ºC typ. 2.5 max 3.0 Trr (ns) typ. 70 max 100 IF(A) Single chip package 75 IF(A) Dual chip package - Features Low ...
930. 10.6A 700V N-Channel Super Junction Power Mosfet Djf420n70t to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
