Jiangsu Profile

Product List
916. Hot Sale 20A 200V Schottky Barrier Diode Mbrf20200CT to-220f
[Aug 01, 2024]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
917. Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252
[Aug 01, 2024]

PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
918. Hot Sale 100A 30V N-Channel Enhancement Mode Power Mosfet DHD100n03 to-252
[Aug 01, 2024]

PARAMETER SYMBOL VALUE UNIT DH100N03/DHI100N03/DHE100N03/DHB100N03/DHD100N03 DHF100N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
919. Hot Sale Three-Terminal 1.0A Positive Voltage Regulator 78m15A IC
[Aug 01, 2024]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
920. Hot Sale 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07D to-252
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
921. Hot Sale 85A 80V N-Channel Enhancement Mode Power Mosfet Dh075n08 to-220c
[Jul 31, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
922. Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252
[Jul 31, 2024]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
923. Hot Sale 33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06ld to-252b
[Jul 27, 2024]

PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
924. Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220
[Jul 26, 2024]

PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
925. Hot Sale 4A 650V N-Channel Enhancement Mode Power Mosfet F4n65 to-220f
[Jul 26, 2024]

PARAMETER SYMBOL VALUE UNIT F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
926. Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b
[Jul 26, 2024]

PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
927. Hot Sale Insulated Gate Bipolar Transistor Dhg20t65D IGBT to-220f
[Jul 26, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
928. Hot Sale 650V 4A N-Channel Enhancement Mode Power Mosfet D4n65 to-252
[Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
929. Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b
[Jul 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
930. Silicon Controlled Rectifier Thyristor Bt153 to-220
[Jul 02, 2024]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
