Jiangsu Profile
Product List
1501. 250A 40V N-Channel Enhancement Mode Power Mosfet Dh019n04D to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1502. 20A 60V Schottkybarrierdiode Mbrf2060CT to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 48 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 10 A Repetitive ...
1503. 9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1504. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1505. 80A 40V N-Channel Enhancement Mode Power Mosfet Dh065n04D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE DH065N04D UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 56 A Drain ...
1506. 5A 650V N-Channel Enhancement Mode Power Mosfet 5n65c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 5N65C Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1507. 100A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1508. 49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1509. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
1510. 180A 80V N-Channel Enhancement Mode Power Mosfet Dh8004 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHI8004/ DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1511. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...
1512. 50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1513. 200V/11mΩ /110A N-Mosfet DSG108n20na to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1514. 90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
1515. 7A 700V N-Channel Enhancement Mode Power Mosfet D7n70 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT D7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
