Jiangsu Profile
Famous Export Brand
Product List
226. Reliable 700V N-Channel Mosfet Transistor for Power Applications 
[Aug 03, 2026]
[Aug 03, 2026] Description: SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology ...
Company: Nova Import & Export Trade Co., Ltd
227. Original 900V 25A To247 Ssw90r160s2 N Channel Power Mosfet Transistor [Jul 07, 2026]
[Jul 07, 2026] Description: SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology ...
Company: Nova Import & Export Trade Co., Ltd
228. New Original Delta Dvp28sv11t2 Sv2 Series Functional PLC Di 16 Do 12 Transistor [Sep 04, 2026]
[Sep 04, 2026] 1.Product Name New Original Delta DVP28SV11T2 SV2 Series Functional PLC DI 16 DO 12 Transistor 2.Product Brand Delta DVP28SV11T2 SV2 Series Functional PLC - 16 DI / 12 DO (Transistor Output) The Delta DVP28SV11T2 ...
229. Zhendi 2sb688 2SD718 High Power Amplifier Application Transistor [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
230. 60A 650V Bipolar Transistor DHG60T65D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
231. Zhendi New Original 700V Ssp70r190s2 N-Channel RF Power Mosfet Transistor for Power Supply [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Featuring a Single Mesa Structure, this exceptional product ensures optimal performance and reliability. Crafted with a state-of-the-art Table Glass Passivation Process, ...
232. Bipolar Transistor TIP122 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...
233. Original 650V Ssp65r600s2 RF Power Mosfet SMD Transistor for Electronics [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
234. Bipolar Transistor TIP41C TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...
235. PLC Signal Amplifier Module Conversion Input Optocoupler Isolation Transistor Tigger Voltage 24V [Aug 12, 2026]
[Aug 12, 2026] Product Description Industrial 16/32 Channel MOSFET Relay Module – PLC Amplification Module MOSFET signal conversion module is a solid-state switching device based on metal oxide semiconductor field-effect transistor ...
236. Electronic Component 600V Trench IGBT Module Transistor for Efficient Power Applications Power ... [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
237. Original Electronic Component Ssb80r380s Power Mosfet IGBT Silicon Transistor to-263 IGBT ... [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
238. 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GaN RF Power Transistor [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
239. 2.5-7.2GHz Ingap/GaAs Heterojunction Bipolar Transistor Signal Power Amplifier Transistor for ... [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description YV257208 is an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC Oscillator with negative resistance devices, buffer amplifiers, filters and active biasing networks. The ...
240. Standard Mount Diode Rectifier Mosfet Transistor Specifications by Powerpassion GF15h60df Transistor [Mar 06, 2026]
[Mar 06, 2026] Product Description Product Features Boasting a sophisticated single mesa structure (Single Mesa), this diode rectifier ensures optimal performance and reliability. Featuring a cutting-edge table glass passivation ...
