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Product List
346. DIODE DSEI 2x61-12B 
[Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
347. MOSFET IXFN38N100Q2 [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
348. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
349. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
350. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
351. 140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
352. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
353. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
354. F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...
355. 18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
356. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
357. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
358. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
359. 150A 100V N-Channel Enhancement Mode Power Mosfet Dh150n10 to-220 [Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
360. Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
