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241. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
242. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
243. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
244. 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GaN RF Power Transistor [May 19, 2026]
[May 19, 2026] Product Description Product Description Innotion's YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
245. 30W 50V GaN Hemt RF PA Power Amplifier RF Power Transistor for 5700- 5900MHz [May 18, 2026]
[May 18, 2026] Product Description Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is ...
246. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40f65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
247. 2.5-7.2GHz Ingap/GaAs Heterojunction Bipolar Transistor Signal Power Amplifier Transistor for ... [May 18, 2026]
[May 18, 2026] Product Description Product Description YV257208 is an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC Oscillator with negative resistance devices, buffer amplifiers, filters and active biasing networks. The ...
248. 40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...
249. 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
250. Durable Power Diode Transistor for Enhanced Energy Conservation [Apr 08, 2026]
[Apr 08, 2026] Elevate your potential with the ultimate in efficiency and cost-effectiveness through our Factory Price Disc Thyristor Power Diode Transistors. Infuse your projects with our trailblazing technology, meticulously crafted ...
251. High Electron Mobility 60W 28V Gallium Nitride High Gain Wide Bandwidth Capability Frequency up to ... [May 08, 2026]
[May 08, 2026] Product Description Product Description Innotion's YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
252. FUJI Newset IGBT Modules Transistor 1MBI900VXA-120PC-54 1MBI200HH-120L-50 1MBI900V-120-50 [May 26, 2026]
[May 26, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 1-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
253. FF900R12ME7_B11_ENG FF600R12IP4 FF600R12IE4 High Tech IGBT Infineon IGBT Transistor [Jun 01, 2026]
[Jun 01, 2026] Product Description Infineno IGBT module Infineon, a German company, produces a wide range of IGBT modules. To facilitate customer selection, we categorize them by voltage levels, including 600V/650V, 1200V, ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
254. FUJI IGBT module 6MBI200XX-120-50 2MBI100XA-120-50 2MBI150XA-120-50 IGBT Transistor [Jun 02, 2026]
[Jun 02, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 6-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
255. 75A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc75f120m2 to-247plus [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
