Jiangsu Profile
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Product List
271. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
272. 15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...
273. 60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
274. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
275. NPN Epitaxial Silicon Transistor Tip41c to-220 to-252 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 A *Collector Current ...
276. 40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...
277. Hot Sale NPN Epitaxial Silicon Transistor Tip122 to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 5 A *Collector Current ...
278. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
279. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor G50t65ds to-247s [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
280. 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
281. Zhendi New Original 650V 13A To252 Sst65r360s2 N-Channel SMD Mosfet Transistor [Jun 22, 2026]
[Jun 22, 2026] Product Description Product Features With a meticulous Single Mesa structure, our diode rectifier MOSFET transistor is engineered for peak performance. Featuring an advanced table glass passivation process, this ...
282. 30W 50V GaN Hemt RF PA Power Amplifier RF Power Transistor for 5700- 5900MHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is ...
283. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jul 16, 2026]
[Jul 16, 2026] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
284. 7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...
285. High Electron Mobility 60W 28V Gallium Nitride High Gain Wide Bandwidth Capability Frequency up to ... [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
