Jiangsu Profile
Famous Export Brand
Featured Products
Product List
361. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 
[Dec 31, 2025]
[Dec 31, 2025] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
362. Hot Sale 70V/6.3mΩ /100A N-Channel Enhancement Mode Power Mosfet Dh070n07 to-220c [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
363. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c [Nov 28, 2025]
[Nov 28, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
364. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85e to-263 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
365. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
366. 9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
367. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
368. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
369. 30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
370. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Dec 31, 2025]
[Dec 31, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
371. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
372. 600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
373. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
374. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
375. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
