Jiangsu Profile
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Product List
256. 60W 6-8GHz 50ω-Match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor 
[Oct 16, 2026]
[Oct 16, 2026] Product Description Product Description YPM60800860M is a 60-watt, 50 Ω -matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...
257. Bipolar Transistor D882 TO-126 [Aug 08, 2026]
[Aug 08, 2026] PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBD 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base Current(continuous) VEBO 5 V Collector current IC 3 A Collector pulse current (TP < ...
258. Zhendi New Original 650V 13A To252 Sst65r360s2 N-Channel SMD Mosfet Transistor [Jun 22, 2026]
[Jun 22, 2026] Product Description Product Features With a meticulous Single Mesa structure, our diode rectifier MOSFET transistor is engineered for peak performance. Featuring an advanced table glass passivation process, this ...
259. 30W 50V GaN Hemt RF PA Power Amplifier RF Power Transistor for 5700- 5900MHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to 6000MHz, in particular 5700- 5900MHz. The performance is ...
260. 7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...
261. High Electron Mobility 60W 28V Gallium Nitride High Gain Wide Bandwidth Capability Frequency up to ... [Jul 10, 2026]
[Jul 10, 2026] Product Description Product Description Innotion's YP10401560T is a 60-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
262. High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor Yp601241t [Jul 09, 2026]
[Jul 09, 2026] Product Description Product Description Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
263. Durable Power Diode Transistor for Enhanced Energy Conservation [Apr 08, 2026]
[Apr 08, 2026] Elevate your potential with the ultimate in efficiency and cost-effectiveness through our Factory Price Disc Thyristor Power Diode Transistors. Infuse your projects with our trailblazing technology, meticulously crafted ...
264. FUJI IGBT module 6MBI200XX-120-50 2MBI100XA-120-50 2MBI150XA-120-50 IGBT Transistor [Jun 02, 2026]
[Jun 02, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 6-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
265. FF900R12ME7_B11_ENG FF600R12IP4 FF600R12IE4 High Tech IGBT Infineon IGBT Transistor [Jun 01, 2026]
[Jun 01, 2026] Product Description Infineno IGBT module Infineon, a German company, produces a wide range of IGBT modules. To facilitate customer selection, we categorize them by voltage levels, including 600V/650V, 1200V, ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
266. Microprocessor Transistor Safari Camping for Events Large Hotel Tent Luxury Resort Party Marquee ... [Jan 15, 2026]
[Jan 15, 2026] Accessories of our tents · Covers: colourful cover, transparent cover, inflatable roof cover · Windows: dome or square clear PVC windows, mesh window, glass window for glass ...
267. FUJI Newset IGBT Modules Transistor 1MBI900VXA-120PC-54 1MBI200HH-120L-50 1MBI900V-120-50 [May 26, 2026]
[May 26, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 1-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
268. Hot Offer Mosfet Transistor Luxury Wedding for Circus Sale Aluminium Frame Outdoor Exhibition ... [Jan 15, 2026]
[Jan 15, 2026] Tent Roof Type Span Width Bay Distance Eave Height Regular 3m~60m 3m/5m 2.6m/3m/3.3m/3.88m/4.2m/5m/5.2m Dome 3m~40m 3m/5m 2.6m/3m/3.23m/3.88m/3.92m High ...
269. Electronic Contactless Sensor Switch Contactless Transistor [Jul 03, 2025]
[Jul 03, 2025] Air Drying System 1/2" NPT, Bracket & Gauge Air Filters + Mist Separator + Pressure Regulator have increased Flow Rate and provide a complete air preparation solution for your pneumatic air systems and tools. The Three ...
270. Rectifier Diode By255 [Jul 31, 2026]
[Jul 31, 2026] 3A,200-1300V-SILICON RECTIFIER-BY251-BY255 Datasheet Products list SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...
