Jiangsu Profile
Famous Export Brand
Product List
436. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet 
[Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
437. 140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
438. 250A 88V N-Channel Enhancement Mode Power Mosfet Dhs020n88 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
439. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
440. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85e to-263 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
441. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
442. 9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
443. 30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
444. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
445. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
446. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Dec 31, 2025]
[Dec 31, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
447. 500V 20A N-Channel Enhancement Mode Power Mosfet F20n50 to-220f [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 20N50/I20N50/E20N50 F20N50 Maximum Drian-Source DC Voltage VDS 500 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
448. 600V 10A N-Channel Enhancement Mode Power Mosfet 10n60 to-220 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
449. 70A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100 to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
450. 160A 90V N-Channel Enhancement Mode Power Mosfet Dh90n035r to-220 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
