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511. Hot Sale 100V/15mΩ /50A N-Mosfet Dhs180n10ld to-252b 
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS180N10LD Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
512. Hot Sale -100V/33mΩ /-35A P-Channel Enhancement Mode Power Mosfet Dh100p30d to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
513. Hot Sale 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03 to-220c [Oct 28, 2025]
[Oct 28, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
514. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06D to-252 [Jul 02, 2025]
[Jul 02, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 110 W Rdson 14 - 720 mΩ ...
515. 160A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03p Dfn5*6-8 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
516. 210A 60V N-Channel Enhancement Mode Power Mosfet Dhi027n06 to-262 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH027N06//DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Drian Voltage VGSS ±25 V Drain ...
517. Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 110 A BVGSS ±20 V VTH 2 4 V EAS - - 1440 mJ Ptot - - 200 W Rdson 6.8 - 8.0 mΩ ...
518. 4n65 to-220 4A 650V N-Channel Enhancement Mode Power Mosfet [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH80N06/DHI85N08/DHE85N08 DHF85N08 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
519. 256A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH012N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 256 A (T=100ºC) 181 A Drain ...
520. 96A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
521. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
522. 5A 500V N-Channel Enhancement Mode Power Mosfet 5n50 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
523. -60A -60V P-Channel Enhancement Mode Power Mosfet Dh150p06f to-220f [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -60 A BVGSS ±20 V VTH -1 -3 V EAS - - 506 mJ Ptot - - 30 W Rdson 14 - 720 mΩ ...
524. 112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c [Sep 29, 2025]
[Sep 29, 2025] PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
525. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [Sep 01, 2025]
[Sep 01, 2025] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
