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Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252
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541.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh030n03D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8
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542.

Hot Sale 120A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03p P Pak5*6-8 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220
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543.

Hot Sale 105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/DHS056N85I/DHS056N85E/DHS056N85B/DHS056N85D DHS056N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263
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544.

Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet
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545.

Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Dec 31, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet
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546.

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c
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547.

200V/11mΩ /110A N-Mosfet DSG108n20na to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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548.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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549.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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550.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c
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551.

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c
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552.

40V/2.9mΩ /120A N-Mosfet DTG032n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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553.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263
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554.

100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b
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555.

11A 650V N-Channel Super Junction Power Mosfet Dhdsj11n65 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd