Jiangsu Profile
Product List
2461. 40A 1200V Sic Schottky Barrier Diode Dcct40d120g4 to-247-2 
[Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2462. 650V 20A Sic Schottky Barrier Diode Dcgt20d65g4 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2463. 25A 650V Sic Schottky Barrier Diode Dcet20d65g3 to-263-2 [Jun 23, 2025]
[Jun 23, 2025] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2464. Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2465. 180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...
2466. 120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
2467. SCR Type Reversing Switch Module Skkt50o for Industrial Use [Feb 25, 2026]
[Feb 25, 2026] Product name Wholesale bridge diode scr silicon controlled thyristor module Silver Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction heating, ...
2468. 120V/25mΩ /36A N-Mosfet Dse270n12n3 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...
2469. 8A 650V Sic Schottky Barrier Diode Sic0865 to-247-2L [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SiC Schottky Barrier Diode SIC0865 to-247-2L 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high ...
2470. 62mm IGBT Module Dgb800h120L2t [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2471. 20A 400V Fast Recovery Diode Murf2040CT to-220f [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2472. 600A 1200V Half Bridge Module IGBT Module Dgd600h120L2t Econodual3 Package [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2473. 1700V/40MΩ /67A N-Channel Sic Mosfet Dcc040m170g2 to-247-3 [Feb 04, 2026]
[Feb 04, 2026] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
2474. 1.2mm 1.5mm Thickness 12 Inches Dura420 SUS420J2 Stainless Steel Wafer Ring with High Flatness to ... [Jan 07, 2026]
[Jan 07, 2026] 1.2mm 1.5mm Thickness 12 inches Dura420 SUS420J2 Stainless Steel Wafer Ring with High Flatness to Engage in Folding Product Description Product Name 6" 8" 12" steel Metal Wafer Frame Ring For ...
2475. 150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...
