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150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263
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2401.

150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
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2402.

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263
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2403.

120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ...
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2404.

High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ... Open Details in New Window [Jul 24, 2025]

Product Description High-Quality Semiconductor Chips: Experience the cutting-edge innovation of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Engineered for extraordinary ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07
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2405.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c
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2406.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V 50A N-Mosfet Dsd190n10L3
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2407.

100V 50A N-Mosfet Dsd190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f
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2408.

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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2409.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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2410.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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2411.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 15A 600V Fast Recovery Diode Murf1560 to-220f-2L
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2412.

Hot Sale 15A 600V Fast Recovery Diode Murf1560 to-220f-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 200V Schottkybarrierdiode Mbre10200CT to-263
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2413.

10A 200V Schottkybarrierdiode Mbre10200CT to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b
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2414.

4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn
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2415.

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd