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155A 40V N-Channel Enhancement Mode Power MOSFET DHE035N04 TO-263
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1951.

155A 40V N-Channel Enhancement Mode Power MOSFET DHE035N04 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10E TO-263
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1952.

110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07E TO-263
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1953.

80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 1700V N-Channel SiC Power MOSFET DCC1K0M170G1 TO-247
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1954.

5A 1700V N-Channel SiC Power MOSFET DCC1K0M170G1 TO-247 Open Details in New Window [Aug 09, 2026]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10E TO-263
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1955.

120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 100V N-Channel Enhancement Mode Power MOSFET DHE10H055R TO-263
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1956.

120A 100V N-Channel Enhancement Mode Power MOSFET DHE10H055R TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power MOSFET DH065N06E TO-263
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1957.

120A 60V N-Channel Enhancement Mode Power MOSFET DH065N06E TO-263 Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 650V N-Channel Super Junction Power MOSFET DHFSJ13N65 TO-220F
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1958.

13A 650V N-Channel Super Junction Power MOSFET DHFSJ13N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ13N65//DHISJ13N65/DHESJ13N65/DHBSJ13N65/DHDSJ13N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DSE026N10N3A TO-263
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1959.

180A 100V N-Channel Enhancement Mode Power MOSFET DSE026N10N3A TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4A 650V N-Channel Enhancement Mode Power MOSFET 4N65 TO-220
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1960.

4A 650V N-Channel Enhancement Mode Power MOSFET 4N65 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH80N06/DHI85N08/DHE85N08 DHF85N08 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN
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1961.

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode MUR6020NCT TO-3PN
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1962.

60A 200V Fast Recovery Diode MUR6020NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 600V Fast Recovery Diode MUR60FU60NCT TO-3PN
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1963.

60A 600V Fast Recovery Diode MUR60FU60NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

103A 100V N-Channel Enhancement Mode Power MOSFET DSE065N10L3A TO-263
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1964.

103A 100V N-Channel Enhancement Mode Power MOSFET DSE065N10L3A TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 40V N-Channel Enhancement Mode Power MOSFET DH019N04E TO-263
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1965.

250A 40V N-Channel Enhancement Mode Power MOSFET DH019N04E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd