Jiangsu Profile
Product List
1651. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N055R TO-220 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1652. 4A 600V N-Channel Enhancement Mode Power MOSFET F4N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
1653. 5V Three-Terminal Positive Voltage Regulator IC L7805CV TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
1654. 12A 600V N-Channel Enhancement Mode Power MOSFET 12N60 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1655. 60A 400V Fast Recovery Diode MUR6060DCT TO-3P [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1656. 10A 400V Fast Recovery Diode MUR1040CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1657. 30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C [Aug 09, 2026]
[Aug 09, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1658. 50A 200V N-Channel Enhancement Mode Power MOSFET DHF50N20 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
1659. 15A 650V N-Channel Super Junction Power MOSFET DHFSJ15N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ15N65//DHISJ15N65/DHESJ15N65 DHFSJ15N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1660. 85A 60V N-Channel Enhancement Mode Power MOSFET DH066N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
1661. 8A 500V N-Channel Enhancement Mode Power MOSFET 840 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1662. 50A 60V N-Channel Enhancement Mode Power MOSFET DH60N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH60N06/DHI60N06/DHE60N06/ DHB60N06/DHD60N06 DHF60N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1663. 10A 100V Schottky Barrier Diode MBR10R100CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1664. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1665. 155A 40V N-Channel Enhancement Mode Power MOSFET DHD035N04 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
