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60A 300V Fast Recovery Diode MUR6030NCS TO-3PN
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2251.

60A 300V Fast Recovery Diode MUR6030NCS TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode MUR8020CT TO-3PN
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2252.

80A 200V Fast Recovery Diode MUR8020CT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F
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2253.

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

67A 1700V N-Channel SiC Power MOSFET DCC040M170G2 TO-247
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2254.

67A 1700V N-Channel SiC Power MOSFET DCC040M170G2 TO-247 Open Details in New Window [Aug 09, 2026]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 1200V SiC Schottky Barrier Diode DCCT20D120G4 TO-247
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2255.

20A 1200V SiC Schottky Barrier Diode DCCT20D120G4 TO-247 Open Details in New Window [Aug 09, 2026]

20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN
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2256.

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263
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2257.

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Fast Recovery Diode MUR6065 TO-247
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2258.

60A 650V Fast Recovery Diode MUR6065 TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6
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2259.

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263
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2260.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 1700V SiC Schottky Barrier Diode DCCT25D170G1 TO-247
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2261.

25A 1700V SiC Schottky Barrier Diode DCCT25D170G1 TO-247 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263
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2262.

25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 600V Fast Recovery Diode MURE1560 TO-263
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2263.

15A 600V Fast Recovery Diode MURE1560 TO-263 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247
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2264.

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030BCT TO-247
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2265.

60A 300V Fast Recovery Diode MUR6030BCT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd