Jiangsu Profile
Product List
2251. 0200-00771//Ring, Shadow, Ncsr, 1.5mm Ee Shadowring, Ceramic 
[May 13, 2026]
[May 13, 2026] Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...
2252. Semiconductor Equipment Accessories Cover Ring, Ceramic//0200-06864 [May 13, 2026]
[May 13, 2026] Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...
2253. Source Factory Ceramic Parts 0200-00771 Acceptable for Customization Requests [May 13, 2026]
[May 13, 2026] Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...
2254. Acceptable for Customization Requests Bell Jar //0040-55456 Source Factory [May 13, 2026]
[May 13, 2026] Product Description 0040-55456 0200-00771 0200-05590 BELL JAR SHADOWRING DOME,TOP FEED IPM,300MM Introduction to Main Ceramic Products BELL JAR //0040-55456 The internal kit applicable to the AMAT Endura2 Pre-clean ...
2255. Premium Power Supply with Regulated Thyristor Voltage Control [Apr 08, 2026]
[Apr 08, 2026] Rated Voltage: Embrace the power of precision with our robust three-phase 380VAC (three-phase, three-wire) voltage configuration. Auxiliary Power: Experience versatility with dual-mode flexibility, offering both phase ...
2256. High Efficiency SCR Thyristor Inverter for Phase Control [Apr 08, 2026]
[Apr 08, 2026] Product name Factory price high frequency power inverter thyristor r1275 Color Silver Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction heating, ...
2257. High-Energy Ion Implanters for Advanced Integrated Circuit Production [Mar 25, 2026]
[Mar 25, 2026] Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
2258. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
2259. 100V/2.2mΩ /180A N-Mosfet Dse026n10n3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 170 A Single Pulse Avalanche ...
2260. 30mΩ 1200V N-Channel Sic Power Mosfet Dcc030m120g2 to-247-3L [Nov 08, 2025]
[Nov 08, 2025] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
2261. Oxide and Borated Dumet Lead Wire for Diode [Jun 27, 2025]
[Jun 27, 2025] Dumet wire used as All kinds of light bulb Ni 41~43%, Fe Balance Dumet is a kind of permanent matching with soft glass sealing double metal alloy materials, has a good thermal expansion coefficient, mechanical ...
2262. 80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn [Jun 25, 2025]
[Jun 25, 2025] Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...
2263. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2264. 60A 650V Insulated Gate Bipolar Transistor Dhg60t65D to-3pn [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
2265. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
