Jiangsu Profile
Product List
1801. 34mm 50A 1200V Half Bridge IGBT Module 
[Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1802. 100A 1200V Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1803. 60A 1200V N-Channel Sic Power Mosfet Dhc1m040120d to-3pn [Jun 23, 2025]
[Jun 23, 2025] 60A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1804. Ceramic Parts Deposition Ring, Al W/ESC Semiconductor Equipment Accessories//0200-06863 [Mar 31, 2026]
[Mar 31, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1805. Semiconductor Equipment Accessories Deposition Ring W/Escdual Antilif Al//Semiconductor Components ... [Mar 31, 2026]
[Mar 31, 2026] Company Profile Wuxi Guoyue Electronic Technology Co., Ltd. Wuxi Guoyue Electronic Technology Co., Ltd. is located in the heartland of the Yangtze River Delta region and in the beautiful Jiangnan water town of Wuxi. In ...
1806. High-Energy Ion Implanters for Advanced Integrated Circuit Production [Mar 25, 2026]
[Mar 25, 2026] Product Description Ion implantation technology has the following characteristics: single-sided collimation doping, good doping uniformity and controllability, singularity of doping elements, and it is very easy to ...
1807. 450A 1200V Half Bridge Module Dgd450h120L2t [Feb 04, 2026]
[Feb 04, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1808. IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder [Dec 02, 2025]
[Dec 02, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
1809. 20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L [Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1810. 650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L [Nov 08, 2025]
[Nov 08, 2025] 20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1811. 200V/11mΩ /110A N-Mosfet DSG108n20na to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1812. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1813. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
1814. 150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1815. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
