Jiangsu Profile
Product List
2101. 16A 400V Fast Recovery Diode Murf1640CT to-220f 
[Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2102. 1200V 36A N-Channel Sic Power Mosfet Dhc1m080120d to-3p [Jun 23, 2025]
[Jun 23, 2025] 36A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2103. 115A 1200V N-Channel Sic Power Mosfet Dhc2m016120q to-247-4 [Jun 23, 2025]
[Jun 23, 2025] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2104. Semiconductor Hall IC Ah3134 Unipolar Magnetic Sensor Hall Switch [Mar 18, 2025]
[Mar 18, 2025] Features High sensitivity digital output Stable over the entire temperature range Wide operating voltage range: 4.5V ~ 24V Strong resistance to mechanical stress Reverse power supply protection Non-contact ...
Company: Nanjing AH Electronic Science & Technology Co., Ltd.
2105. High Speed Switching Rectifier Diodes [Jan 11, 2025]
[Jan 11, 2025] Schottky diode is precious metals (gold, silver, aluminum, platinum, etc.) A is positive, with N type semiconductor B as anode, using the contact surface forming A barrier rectifier features and made of metal - ...
2106. Kbpc3510 Kbpc2510 Bridge Rectifiers Kbpc3005 [Apr 10, 2023]
[Apr 10, 2023] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
2107. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet F20n65 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 12.5 A Drain ...
2108. 20A 650V Sic Schottky Barrier Diode Dcct20d65g4 to-247-2 [Jun 25, 2025]
[Jun 25, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2109. Hot Sale 8A 650V N-Channel Enhancement Mode Power Mosfet F8n65 to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT F8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
2110. Hot Sale 15A 600V Fast Recovery Diode Mur1560 to-220-2L [Jun 25, 2025]
[Jun 25, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2111. 10A 600V Fast Recovery Diode Murd1060CT to-252 [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2112. 8A 600V Fast Recovery Diode Mur860 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2113. 2A 650V N-Channel Enhancement Mode Power Mosfet 2n65 to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH85N06/DHI85N06/DHE85N06/DHB85N06/DHD85N06 DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2114. Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
2115. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
