Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Semiconductor

» Jiangsu Product List

Product List

30A 400V Fast Recovery Diode Mur3040ncs to-3pn
Contact Now

2101.

30A 400V Fast Recovery Diode Mur3040ncs to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263
Contact Now

2102.

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L
Contact Now

2103.

1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L Open Details in New Window [Jun 23, 2025]

20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

SCR Type Reversing Switch Module Skkt50o for Industrial Use
Contact Now

2104.

SCR Type Reversing Switch Module Skkt50o for Industrial Use Open Details in New Window [Feb 25, 2026]

Product name Wholesale bridge diode scr silicon controlled thyristor module Silver Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction heating, ...

Company: Jiangsu Danxiang Scr Technology Co., Ltd.

30mΩ 1200V N-Channel Sic Power Mosfet Dccf030m120g2 to-247-4L
Contact Now

2105.

30mΩ 1200V N-Channel Sic Power Mosfet Dccf030m120g2 to-247-4L Open Details in New Window [Nov 08, 2025]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252
Contact Now

2106.

100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 Open Details in New Window [Sep 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251
Contact Now

2107.

60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220
Contact Now

2108.

50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f
Contact Now

2109.

16A 650V N-Channel Enhancement Mode Power Mosfet F16n65 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT F16N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A (T=100ºC) 10 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f
Contact Now

2110.

47A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lf to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f
Contact Now

2111.

50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

37A 650V N-Channel Sic Power Mosfet S37n65D to-247
Contact Now

2112.

37A 650V N-Channel Sic Power Mosfet S37n65D to-247 Open Details in New Window [Jun 25, 2025]

Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

NPN Epitaxial Silicon Transistor Bu406 to-220c
Contact Now

2113.

NPN Epitaxial Silicon Transistor Bu406 to-220c Open Details in New Window [Jun 23, 2025]

Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252
Contact Now

2114.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252 Open Details in New Window [Jun 23, 2025]

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220
Contact Now

2115.

120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd