Jiangsu Profile
Product List
2581. Powerpassion Brand Low Switching Losses Fast Thyristor Module Mkc300/400/500 for Soft Start 
[Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
2582. Advanced Wafer Sorting Machines for Optimal Production Efficiency [May 11, 2026]
[May 11, 2026] Product Description Wafer Sorter with SECS/GEM Integration Compact, high-speed wafer handling system for 4"-12" wafers. Features dual-arm robot, SECS/GEM communication, and customizable picking (vacuum/Bernoulli). ...
2583. Generator Diesel Generator Set with Permanent Magnet Motor Pmg [Sep 16, 2026]
[Sep 16, 2026] Product Introduction In summary, Lingyu aims to provide you with professional generator spare parts. The quality of our spare parts is very reliable because we use original and genuine spare parts used by original ...
Company: Jiangsu Lingyu Generator Co., Ltd.
2584. 600A 1200V Half Bridge IGBT MODULE ECONODUAL3 [Aug 13, 2026]
[Aug 13, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2585. 8A 600V Fast Recovery Diode MUR860CT TO-220C [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2586. 25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
2587. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2588. 5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
2589. 60A 100V N-Channel Enhancement Mode Power MOSFET DSB150N10L3 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
2590. 105A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-220C & DHS110N15D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2591. 150A 30V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
2592. 15A 600V Fast Recovery Diode MUR1560 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2593. 50A 40V N-Channel Enhancement Mode Power MOSFET DHD150N03 TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ Features Fast ...
2594. 100A 68V N-Channel Enhancement Mode Power Mosfet DH100N06F TO-220F [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Low on ...
2595. 160A 30V N-Channel Enhancement Mode Power MOSFET DH020N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
