Jiangsu Profile
Product List
2596. 145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
2597. High Quality SCR Thyristors Semi-Conductor Rectifiers Chips for Semiconductor Devices with Overload ... [Jul 06, 2026]
[Jul 06, 2026] Product Description High-Quality Semiconductor Chips: Experience the cutting-edge innovation of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. Engineered for extraordinary ...
2598. 40n60 IGBT Fgh40n60sfdtu 40n60 IGBT Module Fgh40n60 [Jun 23, 2026]
[Jun 23, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
2599. Zhendi New Original 650V 13A To252 Sst65r360s2 N-Channel SMD Mosfet Transistor [Jun 22, 2026]
[Jun 22, 2026] Product Description Product Features With a meticulous Single Mesa structure, our diode rectifier MOSFET transistor is engineered for peak performance. Featuring an advanced table glass passivation process, this ...
2600. RC Absorption/Snubber Circuit Module Relay Contact Protection Resistance Surge [May 19, 2026]
[May 19, 2026] Product Description Description: RC absorption circuit is also called RC Snubber circuit. It is a circuit structure in which resistors and capacitors are connected in series and connected in parallel with switching ...
2601. SMB, Schottky Rectifier Diode 3A 40V SMB Case Ss34 [Dec 11, 2025]
[Dec 11, 2025] 3A,40V-SCHOTTKY DIODE-SS34/SK34(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
2602. SMB, Schottky Barrier Rectifier Diode SMB Case Ss36 [Dec 11, 2025]
[Dec 11, 2025] 3A,60V-SCHOTTKY DIODE-SS36/SK36(SMB CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
2603. 3A, 800V, Fast Recovery Rectifierd Diode Fr306 [Dec 11, 2025]
[Dec 11, 2025] 3A,50--1000V-Fast Recovery Rectifierd Diode-FR301--FR307 3A,800V,Fast Recovery Rectifierd Diode FR306 Datasheet PRODUCT SERIES Reliability Test List HIGH RELIABILITY-TEST LIST ...
2604. 20A 600V Fast Recovery Diode MUR2060CT TO-220 [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2605. 150A 30V N-Channel Enhancement Mode Power MOSFET DH025N03 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
2606. 40A 600V Insulated Gate Bipolar Transistor IGBT G40T60D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2607. 80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
2608. 50A 60V N-Channel Enhancement Mode Power MOSFET DHF50N06 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2609. 40A 200V Schottky Barrier Diode MBR40200NCT TO-263 [Aug 09, 2026]
[Aug 09, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
2610. 210A 60V N-Channel Enhancement Mode Power MOSFET DHE027N06 TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
