Jiangsu Profile
Product List
1096. 35A, 50-1000V--Diode Bridge Silicon--Kbpc3508 
[Mar 20, 2026]
[Mar 20, 2026] 35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...
1097. Rectifier Diode Rl107 [Mar 06, 2026]
[Mar 06, 2026] 1A,1000V-SILICON RECTIFIER-RL107 Datasheet Products list SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified Prak ...
1098. 35A, 50-1000V--Diode Bridge Silicon--Kbpc35005 [Mar 06, 2026]
[Mar 06, 2026] 35A,50-1000V--bridge silicon Diode --KBPC35005 --KBPC3510(MB35005-MB3510) Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
1099. 35A, 50-1000V--Diode Bridge Silicon--Kbpc3502 [Mar 06, 2026]
[Mar 06, 2026] 35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...
1100. 400W, Tvs Diode P4ke200A [Mar 06, 2026]
[Mar 06, 2026] 400W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
1101. SMB Rectifier Diode S8m [Mar 06, 2026]
[Mar 06, 2026] 8A,1000V-High Voltage RECTIFIER-S8M Datasheet Products list SURFACE MOUNE SILICON RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package ...
1102. 600W, Tvs Diode P6ke440A [Dec 11, 2025]
[Dec 11, 2025] 600W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
1103. 400W, Tvs Diode P4ke440A [Dec 11, 2025]
[Dec 11, 2025] 400W TVS P4KE6.8CA TO P6KE440A Datasheet Products list TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
1104. 600W, Tvs Diode Smbj60A [Nov 20, 2025]
[Nov 20, 2025] 600W TVS SMBJ6.8CA TO SMBJ440A Datasheet Products list SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TYPE Breakdown Voltage Stand-off Voltage Maximum Reverse Leakage @VRWM Maximum Peak ...
1105. 75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1106. 360A 85V N-Channel Enhancement Mode Power MOSFET DSU011N08N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
1107. 235A 30V N-Channel Enhancement Mode Power MOSFET DH012N03U TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...
1108. 272A 100V N-Channel Enhancement Mode Power MOSFET DSU024N10N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
1109. 450A 1200V Half-Bridge Module DMGB450H120L2T 62mm [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 ...
1110. 225A 135V N-Channel Enhancement Mode Power MOSFET DSU035N14N3 TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
