Jiangsu Profile
Product List
1126. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
1127. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P30C /DH100P30CE DH100P30CB/DH100P30CD DH100 P30CF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1128. 180A 80V N-Channel Enhancement Mode Power Mosfet Dh8004 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHI8004/ DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1129. 5A 500V N-Channel Enhancement Mode Power Mosfet B5n50 to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1130. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1131. 10A 600V Fast Recovery Diode Mur1060CT to-220c [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1132. 10A 650V N-Channel Enhancement Mode Power Mosfet 12n65D [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 12N65D Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
1133. 12A 650V N-Channel Enhancement Mode Power Mosfet 12n65 to-220c [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1134. 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1135. 9A 650V N-Channel Enhancement Mode Power Mosfet D9n65 to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1136. 25A 650V N-Channel Super Junction Power Mosfet Dhsj25n65f to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A Single Pulse Avalanche ...
1137. 20A 200V Fast Recovery Diode Mur2020CT to-220c [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1138. 5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1139. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
1140. 25A 100V N-Channel Enhancement Mode Power Mosfet D25n10 to-252b [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
