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12A 60V N-Channel Enhancement Mode Power Mosfet D12n06
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1186.

12A 60V N-Channel Enhancement Mode Power Mosfet D12n06 Open Details in New Window [Jun 24, 2024]

Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Power switching applications Hard ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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1187.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
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1188.

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c
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1189.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07D to-252b
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1190.

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07D to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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1191.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

13A 100V P-Channel Enhancement Mode Power Mosfet 18p10
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1192.

13A 100V P-Channel Enhancement Mode Power Mosfet 18p10 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) -13 (Tc=100ºC) -9 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 400V Fast Recovery Diode Mur20fu40CT to-220c
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1193.

20A 400V Fast Recovery Diode Mur20fu40CT to-220c Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Fast Recovery Diode Murf3060 to-220-2L
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1194.

30A 600V Fast Recovery Diode Murf3060 to-220-2L Open Details in New Window [Jun 24, 2024]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L
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1195.

650V 30mΩ N-Channel Sic Power Mosfet Dccf030m65g2 to-247-4L Open Details in New Window [Jun 24, 2024]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c
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1196.

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f
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1197.

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252
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1198.

20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252 Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f
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1199.

6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 6 A (T=100ºC) 3.7 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
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1200.

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b Open Details in New Window [Jun 24, 2024]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd