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100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b
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1156.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b
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1157.

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b
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1158.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c
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1159.

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c
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1160.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b
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1161.

40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P40D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -40 A (T=100ºC) -28 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b
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1162.

3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b
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1163.

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
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1164.

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c
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1165.

3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b
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1166.

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c
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1167.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power Mosfet F18n50 to-220f
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1168.

18A 500V N-Channel Enhancement Mode Power Mosfet F18n50 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b
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1169.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b
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1170.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd