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40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b
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1216.

40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P40D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -40 A (T=100ºC) -28 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b
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1217.

3A 900V N-Channel Enhancement Mode Power Mosfet DHD3n90 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b
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1218.

5A 500V N-Channel Enhancement Mode Power Mosfet D5n50 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
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1219.

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c
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1220.

3A 900V N-Channel Enhancement Mode Power Mosfet Dh3n90 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b
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1221.

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c
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1222.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power Mosfet F18n50 to-220f
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1223.

18A 500V N-Channel Enhancement Mode Power Mosfet F18n50 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b
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1224.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b
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1225.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c
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1226.

70A 40V N-Channel Enhancement Mode Power Mosfet 70n04 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c
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1227.

205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 700V N-Channel Super Junction Power Mosfet Djf360n70 to-220f
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1228.

12A 700V N-Channel Super Junction Power Mosfet Djf360n70 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ25N65F Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c
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1229.

120A 85V N-Channel Enhancement Mode Power Mosfet DSG048n08n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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1230.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd