Jiangsu Profile
Product List
1126. 10A 700V N-Channel Enhancement Mode Power Mosfet D10n70 to-252b 
[Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
1127. 88A 60V N-Channel Enhancement Mode Power Mosfet DHD070n06 to-252 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH070N06DHI070N06/DHE070N06/DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1128. 18A 650V N-Channel Enhancement Mode Power Mosfet F18n65 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT F18N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 0A (T=100ºC) 11 A Drain ...
1129. 60A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH132N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 35 A Drain ...
1130. 5A 650V N-Channel Enhancement Mode Power Mosfet F5n65 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT F5N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1131. 220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07D to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1132. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1133. 180A 40V N-Channel Enhancement Mode Power Mosfet DTG018n04n to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...
1134. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
1135. 7A 700V N-Channel Enhancement Mode Power Mosfet F7n70 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT F7N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
1136. 6A 900V N-Channel Enhancement Mode Power Mosfet F6n90 to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 6 A (T=100ºC) 3.7 A Drain ...
1137. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10lb to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1138. 19A 80V N-Channel Enhancement Mode Power Mosfet Dh300n08 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH300N08 /DH300N08E DH300N08B/DH300N08D DH300 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1139. 40A 60V P-Channel Enhancement Mode Power Mosfet Dh400p06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH400P 06F DH400P06/DH400P06E/ DH400P06B/DH400P06D Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1140. 7A 650V N-Channel Enhancement Mode Power Mosfet B7n65 to-251 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
