Jiangsu Profile
Product List
1126. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1127. 120A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06e to-263 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
1128. 180A 80V N-Channel Enhancement Mode Power Mosfet Dhe8004 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH8004 /DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1129. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
1130. 13A 900V N-Channel Enhancement Mode Power Mosfet 13n90 to-3pn [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 13N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 13 0A (T=100ºC) 6.5 A Drain ...
1131. 100A 68V N-Channel Enhancement Mode Power Mosfet Dhe3205A to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1132. 200A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 200 A (T=100ºC) 140 A Drain ...
1133. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
1134. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07b to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
1135. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10b to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B/ DH1K1N10D DH1K1N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1136. 75A 100V P-Channel Enhancement Mode Power Mosfet Dh100p70e to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P70E Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -75 A (T=100ºC) -52 A Drain ...
1137. 75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1138. 155A 40V N-Channel Enhancement Mode Power Mosfet Dhe035n04 to-263 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH035N04/ DHE035N04 /DHB035N04/ DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1139. 33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06lb to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH240N06L DH240N06LI/DH240N06LE DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1140. 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
