Jiangsu Profile
Product List
1126. 5A 650V N-Channel Enhancement Mode Power Mosfet F5n65 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT F5N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1127. Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...
1128. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30B Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...
1129. 210A 60V N-Channel Enhancement Mode Power Mosfet N6005 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT N6005/IN6005/EN6005 FN6005 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1130. 10A 650V N-Channel Enhancement Mode Power Mosfet 12n65D [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 12N65D Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
1131. 13A 100V P-Channel Enhancement Mode Power Mosfet 18p10 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) -13 (Tc=100ºC) -9 A Drain ...
1132. 17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...
1133. 5A 650V N-Channel Enhancement Mode Power Mosfet 5n65c [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 5N65C Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.1 A Drain ...
1134. 100A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1135. 20A 600V N-Channel Enhancement Mode Power Mosfet 20n60 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1136. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1137. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1138. 75A 650V Trenchstop Insulated Gate Bipolar Transistorsic Hybrid Discretedagc75h65m to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1139. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1140. 240A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88u [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...
