Jiangsu Profile
Product List
691. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 
[Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
692. 650V 6A Sic Schottky Barrier Diode Sicf0665 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
693. Factory Price Triac Kp500A Kp1000A Kp2500A Capsule Type SCR Thyristor for Industrial Applications [Jul 24, 2025]
[Jul 24, 2025] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
694. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
695. 36A 1200V N-Channel Sic Power Mosfet Dhc1m080120W to-247 [Jun 23, 2025]
[Jun 23, 2025] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
696. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Jun 23, 2025]
[Jun 23, 2025] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
697. Meter-Bus Transceiver [Jan 10, 2023]
[Jan 10, 2023] MS721 is a single chip transceiver developed for Meter-Bus standard (EN1434-3) applications.The MS721 interface circuit adjusts the different potentials between a slave system and the Meter- Bus master. The connection ...
Company: CHANGZHOU XITA PLASTIC CO., LTD.
698. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
699. 40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40 to-220 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT DH100P40/DH100P40I/DH100P40E DH100P40F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
700. 16A 200V Fast Recovery Diode Mur1620CT to-252 [Aug 01, 2025]
[Aug 01, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
701. 145A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04p Dfn5*6-8 [Aug 01, 2025]
[Aug 01, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
702. 68A 1200V N-Channel Sic Power Mosfet Dcc040m120A2 to-247-3L [Jun 23, 2025]
[Jun 23, 2025] 68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
703. DHD150n03 to-252 150A 30V N-Channel Enhancement Mode Power Mosfet [Jun 30, 2025]
[Jun 30, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 45 V ID (T=25ºC) - - 50 A BVGSS ±20 V VTH 1 2 V EAS - - 121 mJ Ptot - - 52 W Rdson 14.5 - 20.0 mΩ ...
704. 10A 650V N-Channel Enhancement Mode Power Mosfet Dhi10n65 to-262 [Jun 30, 2025]
[Jun 30, 2025] PARAMETER SYMBOL VALUE UNIT 10N65/I10N65/E10N65 F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
705. 20A 45V Schottky Barrier Diode Mbr2045CT to-220 [Jun 25, 2025]
[Jun 25, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
