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25A 600V Button Diode Rectifier Diode Ars256
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676.

25A 600V Button Diode Rectifier Diode Ars256 Open Details in New Window [Apr 02, 2025]

Reliability Test List we supply 25A, 35A, 50A, 50-1000V button diode. 25A 600V AUTOMOTIVE BUTTON DIODE-ARS256 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical ...

Company: Changzhou Shunye Electronics Co., Ltd.

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c
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677.

112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

35A, 50-1000V--Diode Bridge Silicon--Kbpc3508
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678.

35A, 50-1000V--Diode Bridge Silicon--Kbpc3508 Open Details in New Window [May 14, 2025]

35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...

Company: Changzhou Shunye Electronics Co., Ltd.

35A, 50-1000V--Diode Bridge Silicon--Kbpc35005
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679.

35A, 50-1000V--Diode Bridge Silicon--Kbpc35005 Open Details in New Window [May 13, 2025]

35A,50-1000V--bridge silicon Diode --KBPC35005 --KBPC3510(MB35005-MB3510) Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

8A, 1000V---Silicon Bridge Diode-Kbj810
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680.

8A, 1000V---Silicon Bridge Diode-Kbj810 Open Details in New Window [Apr 27, 2025]

We supply 8A, 50-1000V---Silicon bridge diode----KBJ8005-KBJ810 8A,1000V,KBJ810 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...

Company: Changzhou Shunye Electronics Co., Ltd.

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
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681.

Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220
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682.

70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220
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683.

Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 80A 400V Fast Recovery Diode Mur80fu40DCT to-3p
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684.

Hot Sale 80A 400V Fast Recovery Diode Mur80fu40DCT to-3p Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

D92-02A to-3pn 10A 200V Fast Recovery Diode
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685.

D92-02A to-3pn 10A 200V Fast Recovery Diode Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
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686.

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252 Open Details in New Window [Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 200V Fast Recovery Diode Mur5020DCT to-3p
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687.

50A 200V Fast Recovery Diode Mur5020DCT to-3p Open Details in New Window [Aug 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
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688.

85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252 Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet
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689.

Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Thyristor Silicon Controlled Rectifier Series 2p4m to-126
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690.

Thyristor Silicon Controlled Rectifier Series 2p4m to-126 Open Details in New Window [Jun 23, 2025]

Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd