Jiangsu Profile

Product List
676. 25A 600V Button Diode Rectifier Diode Ars256
[Apr 02, 2025]

Reliability Test List we supply 25A, 35A, 50A, 50-1000V button diode. 25A 600V AUTOMOTIVE BUTTON DIODE-ARS256 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical ...
677. 112A 68V N-Channel Enhancement Mode Power Mosfet Dh100n06 to-220c
[Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DH100N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 81 A Drain ...
678. 35A, 50-1000V--Diode Bridge Silicon--Kbpc3508
[May 14, 2025]

35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum Forward Package Reversee Rectified ...
679. 35A, 50-1000V--Diode Bridge Silicon--Kbpc35005
[May 13, 2025]

35A,50-1000V--bridge silicon Diode --KBPC35005 --KBPC3510(MB35005-MB3510) Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
680. 8A, 1000V---Silicon Bridge Diode-Kbj810
[Apr 27, 2025]

We supply 8A, 50-1000V---Silicon bridge diode----KBJ8005-KBJ810 8A,1000V,KBJ810 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
681. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D
[Aug 01, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
682. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220
[Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
683. Hot Sale 88A 60V N-Channel Enhancement Mode Power Mosfet Dh070n06 to-220
[Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DH070N06/DHI070N06/DHE070N06/ DHB070N06/DHD070N06 DHF070N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
684. Hot Sale 80A 400V Fast Recovery Diode Mur80fu40DCT to-3p
[Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
685. D92-02A to-3pn 10A 200V Fast Recovery Diode
[Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V Working Peak Reverse Voltage VRWM 200 V DC Blocking Voltage VR 200 V Average Rectified Forward ...
686. 10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252
[Aug 01, 2025]

PARAMETER SYMBOL VALUE UNIT DHB10N65/DHD10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
687. 50A 200V Fast Recovery Diode Mur5020DCT to-3p
[Aug 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
688. 85A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06D to-252
[Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ Features Fast ...
689. Dh180n10 to-220 180A 100V N-Channel Enhancement Mode Power Mosfet
[Aug 01, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 109 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1760 mJ Ptot - - 346 W Rdson 4.3 - 5.5 mΩ ...
690. Thyristor Silicon Controlled Rectifier Series 2p4m to-126
[Jun 23, 2025]

Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
