Jiangsu Profile
Product List
1366. Factory Direct Supply Energy Saving SCR Thyristor Rectifier Semiconductor Chips for Refrigeration ... 
[Jul 06, 2026]
[Jul 06, 2026] Product Description High-Quality Semiconductor Chips: Experience the unparalleled excellence and dependability of Zhendi's Round Disc Type Silicon Controlled Rectifier Thyristors Semiconductor Chips. These chips ...
1367. IGBT Thyristor Module Semiconductor 1600V Bridge Rectifier Water Cooling Diode SCR Thyristor ... [Jul 06, 2026]
[Jul 06, 2026] Product Description Reliable Performance: Immerse yourself in the exceptional capabilities of the MD100-160 Ultrafast AC to DC Diode Bridge Rectifier by Quancheng. Specially tailored for high-performance applications, ...
1368. High-Performance SCR Thyristor Power Module Bridge Rectifier Water Cooling Diode SCR Thyristor ... [Jul 06, 2026]
[Jul 06, 2026] Product Description Reliable Performance: Unleash the power of the MD100-160 Ultrafast AC to DC Diode Bridge Rectifier from Quancheng, meticulously crafted for high-performance endeavors. This robust unit delivers a ...
1369. Original 650V Ssp65r600s2 RF Power Mosfet SMD Transistor for Electronics [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
1370. Zhendi 2sb688 2SD718 High Power Amplifier Application Transistor [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
1371. 1200V N-Channel Mosfet, 80MΩ/30A/15V, to-247-4, Asc30n1200mt4pb Mosfet 32n30 [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
1372. Sf10A400h IC New Integrated Circuit Electronic Components [Jun 26, 2026]
[Jun 26, 2026] Product Description Product Features Experience the sophisticated design of our Single Mesa Structure, ingeniously crafted to enhance performance and reliability. Utilizing advanced Table Glass Passivation Process, ...
1373. 120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06B TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
1374. 200A 40V N-Channel Enhancement Mode Power MOSFET DSG014N04N TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1375. 4.8A 650V N-Channel Super Junction Power MOSFET DHBSJ5N65 TO-251B [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
1376. 83A 600V N-Channel Super Junction Power MOSFET DJC032N60F TO-247 [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...
1377. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG031N10N3 TO-220C [Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...
1378. 200A 85V N-Channel Enhancement Mode Power MOSFET DHS035N88 TO-220 [Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 92 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 2 4 V EAS - - 900 mJ Ptot - - 227 W Rdson 2.5 - 3.0 mΩ Features Fast ...
1379. 60A 300V Fast Recovery Diode MUR6030DCS TO-3P [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1380. 110A 200V N-Channel Enhancement Mode Power MOSFET DSE108N20NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
