Jiangsu Profile
Product List
1381. 130A 85V N-Channel Enhancement Mode Power MOSFET DH050N85E TO-263 
[Aug 13, 2026]
[Aug 13, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1382. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65D TO-3P [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
1383. 120A 40V N-Channel Enhancement Mode Power MOSFET DTE043N04NA TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1384. 70A 120V N-Channel Enhancement Mode Power MOSFET DSE140N12N3 TO-263 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1385. Hotsale Tnd 30kVA Single Phase AC Automatic Voltage Regulator Stabilizer 110V 220V for Home [Aug 13, 2026]
[Aug 13, 2026] Product Description Wide Input Voltage Range: Specifically engineered to conquer even the most severe voltage fluctuations, this top-tier stabilizer operates seamlessly within an impressive input range of 80V to 260V. ...
1386. 115A 1200V N-Channel SiC Power MOSFET DHC2M016120Q TO-247 [Aug 09, 2026]
[Aug 09, 2026] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1387. 75A 1200V IGBT Module DGC75C120M2T ECONOPIM2 [Aug 09, 2026]
[Aug 09, 2026] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
1388. 65A 1200V N-Channel SiC Power MOSFET DHC1M025120D TO-3P [Aug 09, 2026]
[Aug 09, 2026] 65A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1389. 60A 1200V N-Channel SiC Power MOSFET DHC1M040120D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] 60A1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1390. 75A 1700V IGBT MODULE DGA75H170M2T 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1391. 50A 1200V Half Bridge IGBT Module G50N120D 34MM [Aug 09, 2026]
[Aug 09, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
1392. 36A 1200V N-Channel SiC Power MOSFET DHC1M080120W TO-247 [Aug 09, 2026]
[Aug 09, 2026] 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
1393. 120A 1200V N-Channel SiC Power MOSFET DCCF016M120G2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...
1394. Silicon Controlled Rectifier THYRISTOR W2P4M TO-252B [Aug 09, 2026]
[Aug 09, 2026] Description 2P4M Micro trigger series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic ...
1395. 6A 650V SiC Schottky Barrier Diode SICF0665 TO-220 [Aug 09, 2026]
[Aug 09, 2026] 6A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
