Jiangsu Profile
Product List
1441. 70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6 
[Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...
1442. 120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
1443. 256A 30V N-Channel Enhancement Mode Power MOSFET DH012N03P Dfn5*6-8 [Aug 10, 2026]
[Aug 10, 2026] PARAMETER SYMBOL VALUE UNIT DH012N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 256 A (T=100ºC) 181 A Drain ...
1444. 25A 100V N-Channel Enhancement Mode Power MOSFET D25N10 TO-252B [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 V ID (T=25ºC) - 30 A BVGSS ±20 V VTH 2 4 V EAS - - 36 mJ Ptot - - 88 W Features Fast Switching Low ON Resistance Low ...
1445. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS015N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...
1446. 205A 85V N-Channel Enhancement Mode Power MOSFET DHS025N88 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
1447. 1200V N-Channel SiC Power MOSFET DCCF030M120G2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] 5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1448. 5A 600V N-Channel Enhancement Mode Power MOSFET 5N60 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
1449. 9A 650V N-Channel Enhancement Mode Power MOSFET D9N65 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...
1450. 18A 650V N-Channel Enhancement Mode Power MOSFET F18N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT F18N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 0A (T=100ºC) 11 A Drain ...
1451. 90A 30V N-Channel Enhancement Mode Power MOSFET DHB90N03 TO-251B [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
1452. 3A 900V N-Channel Enhancement Mode Power MOSFET DHD3N90 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH3N90/DHE3N90 DHB3N90/DHD3N90 DHF3N90 Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
1453. 100A 100V N-Channel Enhancement Mode Power MOSFET DSG070N10L3 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
1454. 7A 650V N-Channel Enhancement Mode Power MOSFET DHD7N65 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 7 A (T=100ºC) 4.4 A Drain ...
1455. 20A 60V P-Channel Enhancement Mode Power MOSFET DHD9Z24 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH9Z24DHI9Z24IDHE9Z24/DHB9Z24/DHD9Z24 DHF9Z24 Drian-to-Source Voltage VDSS -60 V Gate-to-Drain Voltage VGSS ±20 V Drain ...
