Jiangsu Profile
Product List
2296. 4-20mA voltage output 80mm height min size Piezoresistive pressure sensor Hirschmann connector ... 
[Mar 25, 2026]
[Mar 25, 2026] 
HPM130 Compact Pressure Transmitter adopts advanced technology ,ingenious structure design, with miniaturized imported transmitter and precise digital signal. It can be used in narrow confines to meet the need of ...
2297. HPM288 explosion proof EXd EX tb ATEX protective Pressure Transmitter With Digital Display new anti ... [Mar 25, 2026]
[Mar 25, 2026]
The core component of the HPM288 series explosion-proof pressure transmitter is a high-precision, high-stability silicon piezoresistive pressure sensitive element. Its electrical working principle is to form a ...
2298. 19mm OEM Pressure Sensor with 60-150mv Output Range -100kpa to 100MPa PC10 [Feb 09, 2026]
[Feb 09, 2026]
Product Description PC10 Piezoresistive Silicon Pressure Sensor Features With constant current and constant voltage excitation options Imported highly reliable pressure die Wide temperature compensation ...
Company: Nanjing Wotian Technology Co., Ltd.
2299. Hot Sale 80A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04p [Sep 09, 2025]
[Sep 09, 2025] Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Applications Power switching applications Inverter ...
2300. 100A 1700V Half Bridge Module Dga100h170m2t 34mm [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2301. Hot Sale 105A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04p Dfn5*6-8 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...
2302. Hot Sale 81A 30V N-Channel Enhancement Mode Power Mosfet Dhp90n03b17 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 81 A (T=100ºC) 57 A Drain ...
2303. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2304. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2305. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2306. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2307. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2308. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2309. 600A 1700V Half Bridge Module Dgd600h170L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
2310. Hot Sale 60A 200V Fast Recovery Diode Mur6020bca to-247s [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
