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30A 400V Fast Recovery Diode Mur3040ncs to-3pn
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2326.

30A 400V Fast Recovery Diode Mur3040ncs to-3pn Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263
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2327.

175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L
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2328.

1200V 20A Sic Schottky Barrier Diode Dcct20d120g4 to-247-2L Open Details in New Window [Jun 23, 2025]

20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski ...
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2329.

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski ... Open Details in New Window [Dec 05, 2025]

Audited Supplier

Three/Four Phase Rope CT Sensor 200ka 1000A/100mv 85mv Probe Current Transformer Flexible Rogowski Coil: 3 phase Rogowski Coil Flex CT 1000A/100mV Jiangyin Spark RS rogowski coil is flexible, like rope ,it ...

Company: Jiangyin Spark Electronic Technology Co., Ltd.

Dual SCR Module Thyristor Converter for Optimal Efficiency
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2330.

Dual SCR Module Thyristor Converter for Optimal Efficiency Open Details in New Window [Apr 15, 2026]

Presenting our Factory Direct Energy-Saving Thyristor Converter, an extraordinary marvel of cutting-edge engineering that flawlessly incorporates the state-of-the-art Djode Technology. This revolutionary product is ...

Company: Jiangsu Danxiang Scr Technology Co., Ltd.

High-Performance SCR Thyristor Modules at Factory Direct Prices
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2331.

High-Performance SCR Thyristor Modules at Factory Direct Prices Open Details in New Window [Apr 08, 2026]

Introducing the Affordable Factory Price SCR Thyristor Modules for Efficient Control by Quancheng. Made in Jiangsu, China, these modules come in Surface Mount/Through Hole package types, perfect for welders, converters, ...

Company: Jiangsu Danxiang Scr Technology Co., Ltd.

450A 1200V Half Bridge Module Dgd450h120L2t
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2332.

450A 1200V Half Bridge Module Dgd450h120L2t Open Details in New Window [Feb 04, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder
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2333.

IGBT Modules High Quality SCR Thyristor Power Mtc 300A 1600V Thyristor Power Module for Welder Open Details in New Window [Dec 02, 2025]

Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet
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2334.

Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet Open Details in New Window [Nov 28, 2025]

PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c
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2335.

40V/1.6mΩ /180A N-Mosfet DSG019n04L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 261 A (T=100ºC) 180 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b
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2336.

100V/12mΩ /60A N-Mosfet Dsd150n10L3 to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c
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2337.

40V/1.3mΩ /200A N-Mosfet DSG014n04n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c
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2338.

100V/1.7mΩ /240A N-Mosfet DSG024n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
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2339.

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c
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2340.

100V/2.6mΩ /180A N-Mosfet DSG031n10n3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 158 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd