Jiangsu Profile
Product List
2326. 15A 120V Insulated Gate Bipolar Transistor IGBT G15N120D TO-247 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
2327. 60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
2328. 120A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04B TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
2329. 30A 200V Schottky Barrier Diode MBRF30200CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current TC=120ºC ...
2330. 75A 1200V Fast Recovery Diode MUR75120 TO-247 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 1200 typ 1300 IR(uA)25ºC max 5.0 VF (V) 25ºC typ. 2.5 max 3.0 Trr (ns) typ. 70 max 100 IF(A) Single chip package 75 IF(A) Dual chip package - Features Low ...
2331. 4A 650V N-Channel Enhancement Mode Power MOSFET F4N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
2332. 40A 150V Schottky Barrier Diode MBR40150CT TO-263 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
2333. 100A 85V N-Channel Enhancement Mode Power MOSFET DHS065N85 TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 95 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 400 mJ Ptot - - 125 W Rdson 6.5 - 7.8 mΩ ...
2334. 60A 1200V N-Channel SiC Power MOSFET DHC1M040120W TO-247 [Jul 21, 2026]
[Jul 21, 2026] 60A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It ...
2335. 30A 60V Schottky Barrier Diode MBR3060CT TO-220M [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
2336. 7A 650V N-Channel Enhancement Mode Power MOSFET B7N65 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2337. 40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F120M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2338. 30A 1200V Fast Recovery Diode MUR30120 TO-220F [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
2339. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
2340. 80A 650V Trench FS IGBT DGC80F65M TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...
