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20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L
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1471.

20mΩ 650V N-Channel Sic Power Mosfet Dcc020m65g2 to-247-3L Open Details in New Window [Jun 25, 2025]

20mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b
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1472.

145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f
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1473.

120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b
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1474.

18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18b to-251b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L
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1475.

650V 30A N-Channel Sic Power Mosfet Dccf060m65g2 to-247-4L Open Details in New Window [Jun 25, 2025]

30A 650V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
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1476.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
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1477.

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65
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1478.

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b
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1479.

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
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1480.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c
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1481.

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
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1482.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
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1483.

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
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1484.

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c
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1485.

240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c Open Details in New Window [Jun 25, 2025]

Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd