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Product List
616. MOSFET IXFN38N100Q2 
[Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
617. F740 to-220f 10A 400V N-Channel Enhancement Mode Power Mosfet [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
618. 600V N-Channel Enhancement Mode Power Mosfet F20n60 to-220f [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 20N60 F20N60 20N60D Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
619. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n055r to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH90N055R/DHI90N055R/DHE90N055R DHF90N055R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
620. 50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
621. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Apr 30, 2026]
[Apr 30, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
622. 140A 80V N-Channel Enhancement Mode Power Mosfet E140n08 to-263 [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT 140N08/I140N08/E140N08 F140N08 Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Drain ...
623. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
624. 150A 100V N-Channel Enhancement Mode Power Mosfet Dh150n10 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH150N10/DHI150N10/DHE150N10 DHF150N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
625. 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65D to-3p [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 20N65D Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
626. 61A 60V N-Channel Enhancement Mode Power Mosfet Dh16n06 to-220 [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT DH16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N06 DHF16N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
627. 70A 82V N-Channel Enhancement Mode Power Mosfet Dh8290 to-251 [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
628. 9A 900V N-Channel Enhancement Mode Power Mosfet 9n90 to-3pn [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
629. 15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
630. Hot Sale 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20d to-252 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
