Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Transistor

» Jiangsu Product List

Product List

Daco Diodes, Thyristors, and Igbts Are Brand New and Original
Contact Now

616.

Daco Diodes, Thyristors, and Igbts Are Brand New and Original Open Details in New Window [Mar 04, 2026]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...

Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd

Mds 55A 1600V Power Semiconductor Module Bridge Rectifier
Contact Now

617.

Mds 55A 1600V Power Semiconductor Module Bridge Rectifier Open Details in New Window [Jun 06, 2025]

Product Description Quick Review thyristors are widely used in converter equipment, motor excitation, speed regulation, voltage regulation, frequency regulation, temperature regulation and other contactless ...

Company: Danyang YiCheng Fluid Equipment Co., Ltd.

Supply Original Authentic Products Infineon FF200r12kt4 FF600r12me4 FF450r12me4
Contact Now

618.

Supply Original Authentic Products Infineon FF200r12kt4 FF600r12me4 FF450r12me4 Open Details in New Window [Dec 09, 2025]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...

Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd

Yj Spot Supply of Diode&IGBT Modules
Contact Now

619.

Yj Spot Supply of Diode&IGBT Modules Open Details in New Window [Dec 09, 2025]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...

Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd

Macmic Diode Original Supply
Contact Now

620.

Macmic Diode Original Supply Open Details in New Window [Dec 09, 2025]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...

Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd

Poseico Thyristors&Diodes in Stock
Contact Now

621.

Poseico Thyristors&Diodes in Stock Open Details in New Window [Aug 30, 2024]

We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...

Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd

DIODE DSEI 2x61-12B
Contact Now

623.

DIODE DSEI 2x61-12B Open Details in New Window [Oct 29, 2022]

Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price

Company: Taicang Global Machinery Co., Ltd.

MOSFET IXFN38N100Q2
Contact Now

624.

MOSFET IXFN38N100Q2 Open Details in New Window [Oct 29, 2022]

Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price

Company: Taicang Global Machinery Co., Ltd.

80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C
Contact Now

626.

80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C Open Details in New Window [Sep 10, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

373A 100V N-Channel Enhancement Mode Power MOSFET DSU014N10N3A TOLL
Contact Now

627.

373A 100V N-Channel Enhancement Mode Power MOSFET DSU014N10N3A TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 800V N-Channel Enhancement Mode Power MOSFET F3N80 TO-220F
Contact Now

628.

3A 800V N-Channel Enhancement Mode Power MOSFET F3N80 TO-220F Open Details in New Window [Sep 30, 2026]

PARAMETER SYMBOL VALUE UNIT 3N80/I3N80/ E3N80/B3N80/D3N80 F3N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03 TO-220
Contact Now

629.

200A 30V N-Channel Enhancement Mode Power MOSFET DH020N03 TO-220 Open Details in New Window [Sep 30, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C
Contact Now

630.

18A 500V N-Channel Enhancement Mode Power MOSFET 18N50 TO-220C Open Details in New Window [Sep 30, 2026]

PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd