Jiangsu Profile
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Product List
631. Hot Sale 180A 80V N-Channel Enhancement Mode Power Mosfet Dh029n08 to-220 
[May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH029N08/DHI029N08/DHE029N08 DH029N08D DH029N08B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
632. Hot Sale 18A 100V P-Channel Enhancement Mode Power Mosfet Dh100p18d to-252 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
633. Hot Sale Insulated Gate Bipolar Transistor Dhg20t65D IGBT to-220f [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
634. Hot Sale 150A 30V N-Channel Enhancement Mode Power Mosfet Dh025n03D to-252 & Dh025n03e to-263 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
635. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85 to-220c [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...
636. 25A 30V N-Channel Enhancement Mode Power Mosfet DHD20n03 to-252 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DHB20N03/DHD20N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 16 A Drain ...
637. 650V 12A N-Channel Enhancement Mode Power Mosfet F12n65 to-220f [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
638. 5A 600V N-Channel Enhancement Mode Power Mosfet 5n60 to-220c [May 28, 2026]
[May 28, 2026] PARAMETER SYMBOL VALUE UNIT 5N60 Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3.6 A Drain ...
639. 4A 600V N-Channel Enhancement Mode Power Mosfet D4n60 to-252 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
640. 7A 600V N-Channel Enhancement Mode Power Mosfet 7n60 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
641. 50A 150V N-Channel Enhancement Mode Power Mosfet Dh50n15 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH50N15/DHI50N15/DHE50N15 DHF50N15 Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...
642. 30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
643. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
644. 600V 2A N-Channe0l Enhancement Mode Power Mosfet B2n60 to-251 [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL VALUE UNIT 2N60/I2N60/E2N60/B2N60/D2N60 F2N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
645. 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247 [Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
