Jiangsu Profile
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Product List
631. 180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
632. 180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS022N06/DHS022N06E/DHS022N06B/DHS022N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
633. 150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
634. 145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5 [Aug 08, 2026]
[Aug 08, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...
635. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
636. 80A 68V N-Channel Enhancement Mode Power MOSFET DTG080N07N TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...
637. 80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
638. 250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
639. 650V 50A Wide-Temperature IGBT Power Transistor N-Channel Mosfets Transistor High-Speed Switch ... [Aug 06, 2026]
[Aug 06, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Partnered with a design and operation team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced power semiconductor devices. Our ...
Company: Nova Import & Export Trade Co., Ltd
640. 650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch [Aug 06, 2026]
[Aug 06, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a pro team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced devices. Our high-voltage MOSFETs use multi-layer ...
Company: Nova Import & Export Trade Co., Ltd
641. Electronic Component 900V Trench IGBT Module Transistor Replacement for Ipw90r120c3 & Stw28n90K5 [Jul 07, 2026]
[Jul 07, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...
Company: Nova Import & Export Trade Co., Ltd
642. 11A 650V N-Channel Super Junction Power MOSFET DHBSJ11N65 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
643. 180A 85V N-Channel Enhancement Mode Power MOSFET DSD040N08N3A TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
644. 50A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT G50N120D TO-264 [Aug 28, 2026]
[Aug 28, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
645. 120A 90V N-Channel Enhancement Mode Power MOSFET DH90N045R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
