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646. Bom IC in Stock New Original Integrated Circuit Chip Bom List Rfq Electronic Components ... 
[Mar 10, 2026]
[Mar 10, 2026] Bom in Stock New Original Integrated Circuit Chip Bom List Rfq Electronic Components Consultation More Discounts
647. Stock New Original Al9910-5s-13 Gbj1502-F Diodes [Mar 19, 2025]
[Mar 19, 2025] We specialize in IGBT, fuse, thyristor, diode, rectifier bridge and other electronic components! Due to the large number of product type, in order to provide you with quality products and services, please consult ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
648. 68V N-Channel Trench Power Mosfet to-263 [Jan 06, 2026]
[Jan 06, 2026]
Company: Wuxi Kingful Corporation., Ltd
649. DIODE DSEI 2x61-12B [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
650. MOSFET IXFN38N100Q2 [Oct 29, 2022]
[Oct 29, 2022] Profesioanl MOSFET and DIODE Supplier with Qualified products and Competitive Price
Company: Taicang Global Machinery Co., Ltd.
651. 68V 82A N-Channel Trench Power Mosfet to-252 Sjd68n058 [Dec 30, 2025]
[Dec 30, 2025]
Company: Wuxi Kingful Corporation., Ltd
652. 15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...
653. D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
654. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
655. Electronic Component 900V Trench IGBT Module Transistor Replacement for Ipw90r120c3 & Stw28n90K5 [Jul 07, 2026]
[Jul 07, 2026] Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...
Company: Nova Import & Export Trade Co., Ltd
656. 11A 650V N-Channel Super Junction Power Mosfet Dhbsj11n65 to-251b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
657. 50A 1200V Trenchstop Insulated Gate Bipolar Transistor G50n120d to-264 IGBT [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
658. Hot Sale 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dhg50t65D [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
659. 7.5A 600V N-Channel Enhancement Mode Power Mosfet 8n60 to-220 [Jul 16, 2026]
[Jul 16, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
660. 600V 7.5A N-Channel Enhancement Mode Power Mosfet F8n60 to-220f [Jul 16, 2026]
[Jul 16, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
