Jiangsu Profile
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Product List
646. 170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
647. 50A 650V Trench FS IGBT G50T65D TO-3PN [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
648. 100A 40V N-Channel Enhancement Mode Power MOSFET DHS008N04P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...
649. 30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGF30F65M2 TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
650. 160A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGCP160H65L2 TO-247PLUS [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 240 A Collector Current (Tc=100ºC) 160 A Pulsed ...
651. 75A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F120M2 TO-247PLUS [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
652. 40A 40V N-Channel Enhancement Mode Power MOSFET DSR070N04LA DFN3*3 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 40 A Drain ...
653. 360A 85V N-Channel Enhancement Mode Power MOSFET DSU011N08N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 433 A (T=100ºC) 360 A Drain ...
654. 235A 30V N-Channel Enhancement Mode Power MOSFET DH012N03U TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 235 A (T=100ºC) 148 A Drain ...
655. 225A 135V N-Channel Enhancement Mode Power MOSFET DSU035N14N3 TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 225 A (Tc=100ºC) 159 A Drain ...
656. 272A 100V N-Channel Enhancement Mode Power MOSFET DSU024N10N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 272 A (T=100ºC) 192 A Drain ...
657. 11A 650V N-Channel Super Junction Power MOSFET DHDSJ11N65 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...
658. 7.5A 600V N-Channel Enhancement Mode Power MOSFET F8N60 TO-220F [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the ...
659. 7.5A 600V N-Channel Enhancement Mode Power MOSFET 8N60 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with ...
660. 18A 650V N-Channel Enhancement Mode Power MOSFET F18N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT F18N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 0A (T=100ºC) 11 A Drain ...
