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646. Insulated Gate Bipolar Transistor IGBT G60t65D to-3p 
[Apr 30, 2026]
[Apr 30, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
647. F16n60 to-220f 16A 600V N-Channel Enhancement Mode Power Mosfet [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 16N60 F16N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 16 A Single Pulse Avalanche ...
648. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
649. 18A 200V N-Channel Enhancement Mode Power Mosfet D18n20 to-252 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...
650. 7A 650V N-Channel Enhancement Mode Power Mosfet D7n65 to-252 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
651. Dh072n07D, to-252, 80A 68V N-Channel Enhancement Mode Power Mosfet [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
652. 50A 60V N-Channel Enhancement Mode Power Mosfet Dh50n06 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
653. D7509, to-220, 80A 75V N-Channel Enhancement Mode Power Mosfet [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...
654. 250A 88V N-Channel Enhancement Mode Power Mosfet Dhs020n88 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
655. 70A 100V N-Channel Enhancement Mode Power Mosfet D70n10 to-220 [May 29, 2026]
[May 29, 2026] PARAMETER SYMBOL VALUE UNIT D70N10/ID70N10/ED70N10/BD70N10/DD70N10 FD70N10 Maximum Drian-Source DC Voltage VDS 100 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
656. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 [Apr 01, 2026]
[Apr 01, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
657. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85e to-263 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
658. 9A 200V N-Channel Enhancement Mode Power Mosfet D630 to-252 [Mar 02, 2026]
[Mar 02, 2026] PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...
659. 60A 20V N-Channel Enhancement Mode Power Mosfet Dh048n02D to-252 [Feb 02, 2026]
[Feb 02, 2026] PARAMETER SYMBOL VALUE UNIT DH048N02B/DH048N02D Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...
660. 80A 100V N-Channel Enhancement Mode Power Mosfet Dhs084n10d to-252 [Jan 31, 2026]
[Jan 31, 2026] PARAMETER SYMBOL VALUE UNIT DHS084N10/DHS084N10I/DHS084N10E/DHS084N10B/DHS084N10D DHS084N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
