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120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252
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646.

120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C
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647.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220
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648.

150A 150V N-Channel Enhancement Mode Power MOSFET DSG059N15NA TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DSG059N15NA Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5
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649.

145A 60V N-Channel Enhancement Mode Power MOSFET 6-8L DFN5 Open Details in New Window [Aug 08, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 103 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220
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650.

80A 75V N-Channel Enhancement Mode Power MOSFET D7509 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT D7509/ID7509/ED7509 FD7509 Drian-to-Source Voltage VDSS 75 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220
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651.

250A 88V N-Channel Enhancement Mode Power MOSFET DHS020N88 TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 88 V Gate-to-Drian Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Super Power Mosfet Transistor Ssp80r600s2 Replacement for Ipa80r600p7 Stf10n80K5
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652.

Super Power Mosfet Transistor Ssp80r600s2 Replacement for Ipa80r600p7 Stf10n80K5 Open Details in New Window [Oct 20, 2026]

Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to ...

Company: Nova Import & Export Trade Co., Ltd

650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch
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653.

650V 75A Low-Loss IGBT Transistor RF-Ready Power Transistor High-Frequency Signal Switch Open Details in New Window [Aug 06, 2026]

Company Profile NOVA IMPORT&EXPORT TRADE CO.,LTD Collaborated with a pro team with 15+ years in power semiconductors, NOVA is dedicated to R&D and innovation of advanced devices. Our high-voltage MOSFETs use multi-layer ...

Company: Nova Import & Export Trade Co., Ltd

11A 650V N-Channel Super Junction Power MOSFET DHBSJ11N65 TO-251B
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654.

11A 650V N-Channel Super Junction Power MOSFET DHBSJ11N65 TO-251B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHSJ11N65/ DHISJ11N65/ DHESJ11N65/ DHBSJ11N65/ DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220
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655.

60A 100V N-Channel Enhancement Mode Power MOSFET DSG150N10L3 TO-220 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252
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656.

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252 Open Details in New Window [Sep 05, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03 TO-220C
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657.

140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03 TO-220C Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B
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658.

60A 100V N-Channel Enhancement Mode Power MOSFET DSD150N10L3 TO-252B Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 68V N-Channel Enhancement Mode Power MOSFET DTD080N07N TO-252B
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659.

80A 68V N-Channel Enhancement Mode Power MOSFET DTD080N07N TO-252B Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 700V N-Channel Super Junction Power MOSFET DJD420N70T TO-252
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660.

10.6A 700V N-Channel Super Junction Power MOSFET DJD420N70T TO-252 Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd