Jiangsu Profile
Product List
1111. 11A 650V N-Channel Super Junction Power Mosfet Dhfsj11n65 to-220f 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1112. 50A 60V N-Channel Enhancement Mode Power Mosfet Dhf50n06 to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1113. 210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1114. 120A 90V N-Channel Enhancement Mode Power Mosfet Dh90n045r to-220 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH90N045R/DHI90N045R/DHE90N045R DHF90N045R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1115. 60A 68V N-Channel Enhancement Mode Power Mosfet Dh105n07b to-251 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1116. 21A 650V N-Channel Super Junction Power Mosfet Dhfsj21n65 to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
1117. Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1118. 100A 30V N-Channel Enhancement Mode Power Mosfet Dh033n03D to-252 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1119. Dh025n03, to-220, 150A 30V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
1120. Dh10h055r to-220 120A 100V N-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1121. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 [Jul 20, 2026]
[Jul 20, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1122. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs020n04e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1123. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
1124. 2A 650V N-Channel Enhancement Mode Power Mosfet D2n65 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT D2N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 2 A (T=100ºC) 1.3 A Drain ...
1125. Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 [Jul 16, 2026]
[Jul 16, 2026] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
