Jiangsu Profile
Product List
1111. 210A 60V N-Channel Enhancement Mode Power MOSFET DHE027N06 TO-263 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1112. 50A 60V N-Channel Enhancement Mode Power MOSFET DH50N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1113. 60A 68V N-Channel Enhancement Mode Power MOSFET DH105N07B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH105N07/DH105N07I/DH105N07EDH105N07B/DH105N07D DH105N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1114. 100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1115. 120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1116. 21A 650V N-Channel Super Junction Power MOSFET DHFSJ21N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ21N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 21 A Single Pulse Avalanche ...
1117. 11A 650V N-Channel Super Junction Power MOSFET DHFSJ11N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHSJ11N65//DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N65 DHFSJ11N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1118. 40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
1119. 150A 30V N-Channel Enhancement Mode Power MOSFET DH025N03 TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 1 2 V EAS - - 565 mJ Ptot - - 130 W Rdson 2.5 - 3.2 mΩ Features Fast ...
1120. 96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH030N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
1121. 85A 150V N-Channel Enhancement Mode Power MOSFET DHS110N15D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...
1122. 50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G50T65DS TO-247S [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
1123. Photo Etched Stamped Power Transistor Copper Lead Frame Packaging [Jun 18, 2026]
[Jun 18, 2026] OEM Sheet Metal Stamping IC Circuit Copper LED Lead Frame What is commonly referred to as etching, also known as photochemical etching, is a process that involves the following steps: through plate-making and exposure, ...
1124. 6060 6063 6005 6082 6061 Industrial Aluminum Heat Sink for LED Amplifier Transistor [Apr 10, 2026]
[Apr 10, 2026] 6060 6063 6005 6082 6061 Industrial Aluminum Heat Sink for LED Amplifier Transistor Product Description Aluminum can be very popular in the radiator industry, and can shine here, thanks to its excellent performance. ...
1125. Reliable Powerpassion Diode Rectifier Mosfet for Electronics Projects GF15h60df Transistor [Jun 29, 2026]
[Jun 29, 2026] Product Description Product Features Embrace the superior design of the single mesa structure (Single Mesa), which ensures enhanced performance and reliability. Our diode undergoes a meticulous table glass ...
