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120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263
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1066.

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHF10H 037R DH10H037R/ DHE10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10d to-252b
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1067.

Hot Sale 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10
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1068.

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
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1069.

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b
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1070.

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263
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1071.

180A 100V N-Channel Enhancement Mode Power Mosfet Dse026n10na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) (Tc=25ºC) 8 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263
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1072.

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/25mΩ /36A N-Mosfet Dse270n12n3
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1073.

120V/25mΩ /36A N-Mosfet Dse270n12n3 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 36 A (Tc=100ºC) 23 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package
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1074.

150V/175A/4.1mΩ N-Mosfet Dsu047n15na Toll Package Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6
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1075.

100V/5.2mΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6
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1076.

40V/4.0mΩ /66A N-Mosfet DSP060n04la Dfn5X6 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c
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1077.

68V/7.2mΩ /80A N-Mosfet DTG080n07n to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11mΩ /110A N-Mosfet Dse108n20na to-263
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1078.

200V/11mΩ /110A N-Mosfet Dse108n20na to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6
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1079.

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
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1080.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd