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180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263
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1066.

180A 135V N-Channel Enhancement Mode Power MOSFET DSE043N14N TO-263 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F
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1067.

10.6A 700V N-Channel Super Junction Power MOSFET DJF420N70T TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN
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1068.

110A 200V N-Channel Enhancement Mode Power MOSFET DSN108N20N TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263
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1069.

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263
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1070.

240A 100V N-Channel Enhancement Mode Power MOSFET DSE022N10N3 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263
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1071.

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6
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1072.

220A 20V N-Channel Enhancement Mode Power MOSFET DH009N02P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263
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1073.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247
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1074.

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247
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1075.

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247
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1076.

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252
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1077.

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6
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1078.

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C
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1079.

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E TO-263
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1080.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd