Jiangsu Profile
Product List
1066. 100V/1.7MΩ /240A N-Mosfet Dse022n10n3 to-263 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1067. 170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
1068. 40V/4.0MΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
1069. 130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1070. 10.6A 700V N-Channel Super Junction Power Mosfet Djf420n70t to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
1071. 100V/5.5MΩ /100A N-Mosfet Dsd065n10L3a to-252 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
1072. High Voltage Mosfet Dje660n80e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
1073. 120V/12MΩ /70A N-Mosfet Dse140n12n3 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1074. 150V/7.5MΩ /115A N-Mosfet Dse090n15n3a to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
1075. 200V/11MΩ /110A N-Mosfet Dsn108n20n to-3pn [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1076. 200V/11MΩ /110A N-Mosfet Dse108n20na to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
1077. 120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
1078. 100V/1.5MΩ/240A N-Mosfet DSC018n10n to-247 [Jul 16, 2026]
[Jul 16, 2026] DSC018N10N 100V/1.5mΩ/240A N-MOSFET Company: DONGHAI Features Low on resistance Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Pb-Free plating / ...
1079. 170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
1080. 96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...
