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180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c
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1066.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c
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1067.

50A 40V N-Channel Enhancement Mode Power Mosfet 50n04 to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65
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1068.

17A 650V N-Channel Super Junction Power Mosfet Dhsj17n65 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ17N65/DHESJ17N65/DHSJ17N65 DHFSJ17N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b
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1069.

60A 30V N-Channel Enhancement Mode Power Mosfet Dh081n03D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 42 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
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1070.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c
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1071.

220A 40V N-Channel Enhancement Mode Power Mosfet DTG025n04na to-220c Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b
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1072.

-50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b
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1073.

-30A -60V P-Channel Enhancement Mode Power Mosfet Dh400p06ld to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -30 A (T=100ºC) -21 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c
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1074.

240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c Open Details in New Window [Jun 25, 2025]

Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b
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1075.

35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b
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1076.

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G15n60d to-220f
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1077.

Insulated Gate Bipolar Transistor IGBT G15n60d to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b
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1078.

0.8A 600V N-Channel Enhancement Mode Power Mosfet B1n60 to-251b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT 1N60/I1N60/E1N60/B1N60/D1N60 F1N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f
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1079.

7.6A 650V N-Channel Super Junction Power Mosfet Dhfsj8n65 to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b
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1080.

21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd