Jiangsu Profile
Product List
1081. 170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
1082. 96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...
1083. 47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
1084. 64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...
1085. 108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
1086. 176A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07p Dfn5X6-8L [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 176 A (T=100ºC) 123 A Drain ...
1087. 96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
1088. 112A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...
1089. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...
1090. 100A 40V N-Channel Enhancement Mode Power Mosfet Dhs008n04p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 100 A Drain ...
1091. 108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
1092. 70A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06p Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...
1093. 100V/5.2MΩ /95A N-Mosfet DSP070n10L3a Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...
1094. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc50f65m2 to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
1095. Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 110 A BVGSS ±20 V VTH 2 4 V EAS - - 1440 mJ Ptot - - 200 W Rdson 6.8 - 8.0 mΩ ...
