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70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6
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1081.

70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN
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1082.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT G40T65LBBN TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247
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1083.

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LB TO-251B
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1084.

47A 100V N-Channel Enhancement Mode Power MOSFET DHS180N10LB TO-251B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS180N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C
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1085.

30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30A TO-220C Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 40V N-Channel Enhancement Mode Power MOSFET DSP018N04LA DFN5X6
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1086.

100A 40V N-Channel Enhancement Mode Power MOSFET DSP018N04LA DFN5X6 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 100 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247
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1087.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F65M2 TO-247 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

99A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10P DFN5X6
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1088.

99A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10P DFN5X6 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 99 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 80V N-Channel Enhancement Mode Power MOSFET DSP037N08N3 DFN5X6
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1089.

100A 80V N-Channel Enhancement Mode Power MOSFET DSP037N08N3 DFN5X6 Open Details in New Window [Sep 04, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

285A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88U TOLL
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1090.

285A 85V N-Channel Enhancement Mode Power MOSFET DHS020N88U TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS020N88U Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 240 A (T=100ºC) 170 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6
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1091.

355A 35V N-Channel Enhancement Mode Power MOSFET DSP007N03LA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 355 A (T=100ºC) 251 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 60V N-Channel Enhancement Mode Power MOSFET DH045N06P DFN5*6
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1092.

115A 60V N-Channel Enhancement Mode Power MOSFET DH045N06P DFN5*6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH045N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 115 A (T=100ºC) 80 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power MOSFET DSP038N08NA DFN5X6
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1093.

130A 85V N-Channel Enhancement Mode Power MOSFET DSP038N08NA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 92 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

175A 150V N-Channel Enhancement Mode Power MOSFET DSU047N15NA TOLL
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1094.

175A 150V N-Channel Enhancement Mode Power MOSFET DSU047N15NA TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 175 (Tc=100ºC) 124 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 40V N-Channel Enhancement Mode Power MOSFET DHS010N04U TOLL
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1095.

300A 40V N-Channel Enhancement Mode Power MOSFET DHS010N04U TOLL Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 300 (Tc=25ºC) 228 A (Tc=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd