Jiangsu Profile
Product List
1561. 20A 150V Schottky Barrier Diode MBR20R150CT TO-220 
[Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1562. 10A 60V Schottky Barrier Diode MBR1060CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
1563. 120A 40V N-Channel Enhancement Mode Power MOSFET DH033N04F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1564. 110A 200V N-Channel Enhancement Mode Power MOSFET DSG108N20NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
1565. 18A 100V P-Channel Enhancement Mode Power MOSFET DH100P18B TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P18/DH100P18I/DH100P18E/DH100P18B/DH100P18D DH100P18F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1566. 145A 30V N-Channel Enhancement Mode Power MOSFET DH028N03D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH028N0 3F DH028N03 /DH028N03E DH028N03B/DH028N03D Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1567. 10A 650V SiC Schottky Barrier Diode DCD10D65G4 TO-252 [Aug 09, 2026]
[Aug 09, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
1568. 45A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...
1569. 50A 40V N-Channel Enhancement Mode Power MOSFET D50N04 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
1570. 2A 500V N-Channel Super Junction Power MOSFET DSJ2N50 TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT SJ2N50/ISJ2N50/ ESJ2N50/BSJ2N50/DSJ2N50 FSJ2N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1571. 10A 45V Schottky Barrier Diode MBRF1045CT TO-220F [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
1572. 20A 100V Schottky Barrier Diode MBR20R100CT TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...
1573. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07B TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
1574. 174A 85V N-Channel Enhancement Mode Power MOSFET DHS030N88 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1575. 145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
