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12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b
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1561.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247
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1562.

9A 900V N-Channel Enhancement Mode Power Mosfet 9n90b to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f
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1563.

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650V 30mΩ N-Channel Sic Power Mosfet to-247-3L
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1564.

650V 30mΩ N-Channel Sic Power Mosfet to-247-3L Open Details in New Window [Jun 23, 2025]

30mΩ 650V N-channel SiC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode Murf10fu60 to-220f-2L
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1565.

10A 600V Fast Recovery Diode Murf10fu60 to-220f-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

11.6A 700V N-Channel Super Junction Power Mosfet Dhsj12n70
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1566.

11.6A 700V N-Channel Super Junction Power Mosfet Dhsj12n70 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHSJ12N70/DHESJ12N70/DHBSJ12N70/DHDSJ12N70 DHFSJ12 N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247
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1567.

20A 650V Sic Schottky Barrier Diode Dcc20d65g4 to-247 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b
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1568.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5A 800V N-Channel Enhancement Mode Power Mosfet F5n80 to-220f
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1569.

5A 800V N-Channel Enhancement Mode Power Mosfet F5n80 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 5 A (T=100ºC) 3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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1570.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
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1571.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60
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1572.

20A 60V Low Vf Schottky Barrier Diode Hmbr20r60 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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1573.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Sic Schottky Barrier Diode Dcc60d65g3 to-247
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1574.

60A 650V Sic Schottky Barrier Diode Dcc60d65g3 to-247 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c
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1575.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd